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CEI EN 62374-1 : 2012

Current

Current

The latest, up-to-date edition.

SEMICONDUCTOR DEVICES - PART 1: TIME-DEPENDENT DIELECTRIC BREAKDOWN (TDDB) TEST FOR INTER-METAL LAYERS

Available format(s)

Hardcopy , PDF

Language(s)

English

Published date

01-01-2012

FOREWORD
1 Scope
2 Terms and definitions
3 Test equipment
4 Test samples
5 Procedures
6 Lifetime estimation
7 Lifetime dependence on inter-metal layer area
8 Summary
Annex A (informative) - Engineering supplementation
        for lifetime estimation
Bibliography

Defines a test method, test structure and lifetime estimation method of the time-dependent dielectric breakdown (TDDB) test for inter-metal layers applied in semiconductor devices.

Committee
CT 309
DevelopmentNote
Classificazione CEI 47-90. (06/2012)
DocumentType
Standard
Pages
24
PublisherName
Comitato Elettrotecnico Italiano
Status
Current

Standards Relationship
EN 62374-1:2010/AC:2011 Identical
IEC 62374-1:2010 Identical

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