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I.S. EN 62374-1:2010

Current

Current

The latest, up-to-date edition.

SEMICONDUCTOR DEVICES - PART 1: TIME-DEPENDENT DIELECTRIC BREAKDOWN (TDDB) TEST FOR INTER-METAL LAYERS

Available format(s)

Hardcopy , PDF

Language(s)

English

Published date

01-01-2010

Preview

For Harmonized Standards, check the EU site to confirm that the Standard is cited in the Official Journal.

Only cited Standards give presumption of conformance to New Approach Directives/Regulations.

FOREWORD
1 Scope
2 Terms and definitions
3 Test equipment
4 Test samples
5 Procedures
6 Lifetime estimation
7 Lifetime dependence on inter-metal layer area
8 Summary
Annex A (informative) - Engineering supplementation for
        lifetime estimation
Bibliography

Specifies a test method, test structure and lifetime estimation method of the time-dependent dielectric breakdown (TDDB) test for inter-metal layers applied in semiconductor devices.

DevelopmentNote
For CENELEC adoptions of IEC publications, please check www.iec.ch to be sure that you have any corrigenda that may apply. (01/2017)
DocumentType
Standard
Pages
22
PublisherName
National Standards Authority of Ireland
Status
Current

Standards Relationship
EN 62374-1:2010/AC:2011 Identical
IEC 62374-1:2010 Identical

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