IEC 60747-9 : 2.0

Withdrawn

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SEMICONDUCTOR DEVICES - DISCRETE DEVICES - PART 9: INSULATED-GATE BIPOLAR TRANSISTORS (IGBTS)

Publisher: International Electrotechnical Committee

Published: 09-26-2007

Available Formats: PDF - English - French, Hardcopy - English - French
More Info on product formats

Table of Contents - (Show below) - (Hide below)

FOREWORD
1 Scope
2 Normative references
3 Terms and definitions
  3.1 Graphical symbol of IGBT
  3.2 General terms
  3.3 Terms related to ratings and characteristics;
      voltages and currents
  3.4 Terms related to ratings and characteristics;
      other characteristics
4 Letter symbols
  4.1 General
  4.2 Additional general subscripts
  4.3 List of letter symbols
5 Essential ratings and characteristics
  5.1 Ratings (limiting values)
  5.2 Characteristics
6 Measuring methods
  6.1 General
  6.2 Verification of ratings (limiting values)
  6.3 Methods of measurement
7 Acceptance and reliability
  7.1 General requirements
  7.2 Specific requirements
  7.3 Type tests and routine tests
Annex A (normative) Measuring method for collector-emitter
                    breakdown voltage
Annex B (normative) Measuring method for inductive load
                    turn-off current under specified conditions
Annex C (normative) Forward biased safe operating area (FBSOA)
Annex D (normative) Case non-rupture
Bibliography

Abstract - (Show below) - (Hide below)

Provides product specific standards for terminology, letter symbols, essential ratings and characteristics, verification of ratings and methods of measurement for insulated-gate bipolar transistors (IGBTs).

General Product Information - (Show below) - (Hide below)

Published
Document Type	Standard
Status	Withdrawn
Publisher	International Electrotechnical Committee
Pages
ISBN
Committee	TC 47
Supersedes	IEC 60747-9 : 1.1
Superseded By	IEC 60747-9:2019

International Equivalents – Equivalent Standard(s) & Relationship - (Show below) - (Hide below)

Equivalent Standard(s)	Relationship
NEN IEC 60747-9 : 2007	Identical
BS IEC 60747-9 : 2007	Identical
SAC GB/T 29332 : 2012	Identical
BS IEC 60747-9 : 2007	Identical
SAC GB/T 29332 : 2012	Identical
NEN IEC 60747-9 : 2007	Identical

Standards Referenced By This Book - (Show below) - (Hide below)

BS EN 62747 : 2014	TERMINOLOGY FOR VOLTAGE-SOURCED CONVERTERS (VSC) FOR HIGH-VOLTAGE DIRECT CURRENT (HVDC) SYSTEMS
01/206102 DC : DRAFT JUL 2001	IEC 60747-8-12 ED.1 - SEMICONDUCTOR DEVICES - DISCRETE DEVICES - PART 8-12: 8-12: METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS POWER SWITCHING APPLICATIONS
07/30162213 DC : 0	BS EN 60747-15 - SEMICONDUCTOR DEVICES - DISCRETE DEVICES - PART 15: ISOLATED POWER SEMICONDUCTOR DEVICES
12/30251416 DC : 0	BS EN 62747 - TERMINOLOGY FOR VOLTAGE-SOURCED CONVERTERS (VSC) FOR HVDC SYSTEMS
I.S. EN 60747-15:2012	SEMICONDUCTOR DEVICES - DISCRETE DEVICES - PART 15: ISOLATED POWER SEMICONDUCTOR DEVICES (IEC 60747-15:2010 (EQV))
12/30252799 DC : 0	BS EN 62751-1-1 - DETERMINATION OF POWER LOSSES IN VOLTAGE SOURCED CONVERTERS (VSC) FOR HV DC SYSTEMS - PART 1: GENERAL REQUIREMENTS
12/30253588 DC : 0	BS EN 62751-2 - DETERMINATION OF POWER LOSSES IN VOLTAGE SOURCED CONVERTER (VSC) VALVES FOR HVDC SYSTEMS - PART 2: MODULAR MULTILEVEL CONVERTERS
BS EN 62751-1 : 2014	POWER LOSSES IN VOLTAGE SOURCED CONVERTER (VSC) VALVES FOR HIGH-VOLTAGE DIRECT CURRENT (HVDC) SYSTEMS - PART 1: GENERAL REQUIREMENTS
NBR IEC 60749-23 : 2012	SEMICONDUCTOR DEVICES - MECHANICAL AND CLIMATIC TEST METHODS - PART 23: HIGH TEMPERATURE OPERATING LIFE
04/30114936 DC : DRAFT JUN 2004	EN 50439 - RAILWAY APPLICATIONS - RELIABILITY TESTS FOR HIGH POWER SEMICONDUCTORS DEVICES - PART 1: STANDARD BASE-PLATE MODULES
BS EN 60747-15 : 2012	SEMICONDUCTOR DEVICES - DISCRETE DEVICES - PART 15: ISOLATED POWER SEMICONDUCTOR DEVICES
I.S. EN 62751-2:2014	POWER LOSSES IN VOLTAGE SOURCED CONVERTER (VSC) VALVES FOR HIGH-VOLTAGE DIRECT CURRENT (HVDC) SYSTEMS - PART 2: MODULAR MULTILEVEL CONVERTERS
BS PD IEC TR 62543 : 2011	HIGH-VOLTAGE DIRECT CURRENT (HVDC) POWER TRANSMISSION USING VOLTAGE SOURCED CONVERTERS (VSC)
IEC 60747-8-4 : 1.0	DISCRETE SEMICONDUCTOR DEVICES - PART 8-4: METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS (MOSFETS) FOR POWER SWITCHING APPLICATIONS
BS EN 62751-2 : 2014	POWER LOSSES IN VOLTAGE SOURCED CONVERTER (VSC) VALVES FOR HIGH-VOLTAGE DIRECT CURRENT (HVDC) SYSTEMS - PART 2: MODULAR MULTILEVEL CONVERTERS
CEI EN 60747-15 : 2012	SEMICONDUCTOR DEVICES - DISCRETE DEVICES - PART 15: ISOLATED POWER SEMICONDUCTOR DEVICES
EN 62751-1 : 2014	POWER LOSSES IN VOLTAGE SOURCED CONVERTER (VSC) VALVES FOR HIGH-VOLTAGE DIRECT CURRENT (HVDC) SYSTEMS - PART 1: GENERAL REQUIREMENTS (IEC 62751-1:2014)
I.S. EN 62751-1:2014	POWER LOSSES IN VOLTAGE SOURCED CONVERTER (VSC) VALVES FOR HIGH-VOLTAGE DIRECT CURRENT (HVDC) SYSTEMS - PART 1: GENERAL REQUIREMENTS
IEC 62751-1 : 2018 (CON ED) 1.1	POWER LOSSES IN VOLTAGE SOURCED CONVERTER (VSC) VALVES FOR HIGH-VOLTAGE DIRECT CURRENT (HVDC) SYSTEMS - PART 1: GENERAL REQUIREMENTS
NF EN 62751-1 : 2015	POWER LOSSES IN VOLTAGE SOURCED CONVERTER (VSC) VALVES FOR HIGH-VOLTAGE DIRECT CURRENT (HVDC) SYSTEMS - PART 1: GENERAL REQUIREMENTS
I.S. EN 62747:2014	TERMINOLOGY FOR VOLTAGE-SOURCED CONVERTERS (VSC) FOR HIGH-VOLTAGE DIRECT CURRENT (HVDC) SYSTEMS
IEC TR 62543 : 1.1	HIGH-VOLTAGE DIRECT CURRENT (HVDC) POWER TRANSMISSION USING VOLTAGE SOURCED CONVERTERS (VSC)
EN 62751-2 : 2014	POWER LOSSES IN VOLTAGE SOURCED CONVERTER (VSC) VALVES FOR HIGH-VOLTAGE DIRECT CURRENT (HVDC) SYSTEMS - PART 2: MODULAR MULTILEVEL CONVERTERS (IEC 62751-2:2014)
IEC 60747-15 : 2.0	SEMICONDUCTOR DEVICES - DISCRETE DEVICES - PART 15: ISOLATED POWER SEMICONDUCTOR DEVICES
IEC 62747 : 2014 COR 1 2015	TERMINOLOGY FOR VOLTAGE-SOURCED CONVERTERS (VSC) FOR HIGH-VOLTAGE DIRECT CURRENT (HVDC) SYSTEMS
IEC 62751-2 : 1ED 2014	POWER LOSSES IN VOLTAGE SOURCED CONVERTER (VSC) VALVES FOR HIGH-VOLTAGE DIRECT CURRENT (HVDC) SYSTEMS - PART 2: MODULAR MULTILEVEL CONVERTERS

Standards Referencing This Book - (Show below) - (Hide below)

IEC 60747-7 : 3.0	SEMICONDUCTOR DEVICES - DISCRETE DEVICES - PART 7: BIPOLAR TRANSISTORS
IEC 60747-1 : 2.1	SEMICONDUCTOR DEVICES - PART 1: GENERAL
IEC 60747-6 : 3.0	SEMICONDUCTOR DEVICES - PART 6: DISCRETE DEVICES - THYRISTORS
IEC 60050-521 : 2.0	INTERNATIONAL ELECTROTECHNICAL VOCABULARY - PART 521: SEMICONDUCTOR DEVICES AND INTEGRATED CIRCUITS
IEC 60747-2 : 3.0	SEMICONDUCTOR DEVICES - PART 2: DISCRETE DEVICES - RECTIFIER DIODES

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IEC 60747-9 : 2.0

Table of Contents - (Show below) - (Hide below)

Abstract - (Show below) - (Hide below)

General Product Information - (Show below) - (Hide below)

International Equivalents – Equivalent Standard(s) & Relationship - (Show below) - (Hide below)

Standards Referenced By This Book - (Show below) - (Hide below)

Standards Referencing This Book - (Show below) - (Hide below)

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