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SEMI MF1366 : 2008(R2013)

Superseded

Superseded

A superseded Standard is one, which is fully replaced by another Standard, which is a new edition of the same Standard.

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superseded

A superseded Standard is one, which is fully replaced by another Standard, which is a new edition of the same Standard.

TEST METHOD FOR MEASURING OXYGEN CONCENTRATION IN HEAVILY DOPED SILICON SUBSTRATES BY SECONDARY ION MASS SPECTROMETRY

Superseded date

11-16-2023

Published date

04-01-2013

Covers the determination of total oxygen concentration in the bulk of single crystal silicon substrates using secondary ion mass spectrometry (SIMS).

DevelopmentNote
Not available for sale from ILI, customer to contact SEMI. (11/2003)
DocumentType
Revision
PublisherName
Semiconductor Equipment & Materials Institute
Status
Superseded
SupersededBy

SEMI M76 : 2010 SPECIFICATION FOR DEVELOPMENTAL 450 MM DIAMETER POLISHED SINGLE CRYSTAL SILICON WAFERS
SEMI MF951 : 2005(R2016) TEST METHOD FOR DETERMINATION OF RADIAL INTERSTITIAL OXYGEN VARIATION IN SILICON WAFERS
SEMI M1 : 2017 SPECIFICATION FOR POLISHED SINGLE CRYSTAL SILICON WAFERS

SEMI M59 : 2014 TERMINOLOGY FOR SILICON TECHNOLOGY
SEMI MF723 : 2007E(R2012)E PRACTICE FOR CONVERSION BETWEEN RESISTIVITY AND DOPANT OR CARRIER DENSITY FOR BORON-DOPED, PHOSPHOROUS-DOPED, AND ARSENIC-DOPED SILICON
SEMI MF43 : 2016 TEST METHOD FOR RESISTIVITY OF SEMICONDUCTOR MATERIALS

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