Name: SEMI MF1528 : 2008(R2018)
Brand: SEMI

TEST METHOD FOR MEASURING BORON CONTAMINATION IN HEAVILY DOPED N-TYPE SILICON SUBSTRATES BY SECONDARY ION MASS SPECTROMETRY

Published date

11-06-2018

Publisher

Semiconductor Equipment & Materials Institute

Covers the determination of total trace boron contamination in the bulk of single crystal, heavily doped n-type silicon substrates using secondary ion mass spectrometry (SIMS).

DevelopmentNote	Not available for sale from ILI, customer to contact SEMI. (10/2004)
DocumentType	Standard
PublisherName	Semiconductor Equipment & Materials Institute
Status	Current

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SEMI MF1528 : 2008(R2018)

TEST METHOD FOR MEASURING BORON CONTAMINATION IN HEAVILY DOPED N-TYPE SILICON SUBSTRATES BY SECONDARY ION MASS SPECTROMETRY

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