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SEMI PV13 : 2014

SEMI PV13 : 2014

Superseded

Superseded

A superseded Standard is one, which is fully replaced by another Standard, which is a new edition of the same Standard.

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superseded

A superseded Standard is one, which is fully replaced by another Standard, which is a new edition of the same Standard.

TEST METHOD FOR CONTACTLESS EXCESS-CHARGE-CARRIER RECOMBINATION LIFETIME MEASUREMENT IN SILICON WAFERS, INGOTS, AND BRICKS USING AN EDDY-CURRENT SENSOR

Superseded date

02-08-2021

Published date

01-12-2013

Publisher

Semiconductor Equipment & Materials Institute

Specifies methods for measuring the excess-carrier lifetime in silicon wafers, ingots, and bricks with carrier recombination lifetime in the range of 0.1 to 15,000 [mu]s.

DevelopmentNote
Not available for sale from ILI, customer to contact SEMI. (03/2011)
DocumentType
Standard
PublisherName
Semiconductor Equipment & Materials Institute
Status
Superseded
SupersededBy

SEMI M1 : 2017 SPECIFICATION FOR POLISHED SINGLE CRYSTAL SILICON WAFERS
SEMI PV22 : 2017 SPECIFICATION FOR SILICON WAFERS FOR USE IN PHOTOVOLTAIC SOLAR CELLS

SEMI MF84:2012 TEST METHOD FOR MEASURING RESISTIVITY OF SILICON WAFERS WITH AN IN-LINE FOUR-POINT PROBE
SEMI MF533 : 2010(R2016) TEST METHODS FOR THICKNESS AND THICKNESS VARIATION OF SILICON WAFERS
SEMI M59 : 2014 TERMINOLOGY FOR SILICON TECHNOLOGY
SEMI MF723 : 2007E(R2012)E PRACTICE FOR CONVERSION BETWEEN RESISTIVITY AND DOPANT OR CARRIER DENSITY FOR BORON-DOPED, PHOSPHOROUS-DOPED, AND ARSENIC-DOPED SILICON
SEMI MF28 : 2017 TEST METHOD FOR MINORITY CARRIER LIFETIME IN BULK GERMANIUM AND SILICON BY MEASUREMENT OF PHOTOCONDUCTIVITY DECAY
SEMI MF43 : 2016 TEST METHOD FOR RESISTIVITY OF SEMICONDUCTOR MATERIALS

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