BS IEC 60747-8:2000

Superseded

View Superseded by

Discrete semiconductor devices and integrated circuits Field-effect transistors - Additional ratings and characteristics and amds in the measuring methods for power switching field effect transistors.

Available format(s)

Hardcopy , PDF

Superseded date

09-07-2021

Language(s)

English

Published date

15-06-2001

Publisher

British Standards Institution

Gives standards for the following categories of field-effect transistors : -Type A: junction-gate type; -Type B: insulated-gate depletion type; -Type C: insulated-gate enhancement type.

Committee	EPL/47
DevelopmentNote	Supersedes BS 6493-1.8(1985) (05/2001) Supersedes 92/34150 DC. (06/2005) Supersedes 07/30161967 DC. (06/2011)
DocumentType	Standard
Pages	72
PublisherName	British Standards Institution
Status	Superseded
SupersededBy	BS IEC 60747-8:2010+A1:2021
Supersedes	07/30161967 DC : 0 92/34150 DC : DRAFT OCT 1992 BS 6493-1.8:1985

Standards	Relationship
IEC 60747-8:2000	Identical
IEC 60747-8:2010	Identical

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IEC 60747-1:2006+AMD1:2010 CSV	Semiconductor devices - Part 1: General
IEC 60749-34:2010	Semiconductor devices - Mechanical and climatic test methods - Part 34: Power cycling
IEC 60747-2:2016	Semiconductor devices - Part 2: Discrete devices - Rectifier diodes
IEC 60749-23:2004+AMD1:2011 CSV	Semiconductor devices - Mechanical and climatic test methods - Part 23: High temperature operating life