SEMICONDUCTOR DEVICES - HOT CARRIER TEST ON MOS TRANSISTORS

Available format(s)

Hardcopy , PDF

Language(s)

English

Published date

01-01-2011

Publisher

Comitato Elettrotecnico Italiano

FOREWORD
1 Scope
2 Abbreviations and letter symbols
3 Test structures
4 Stress time
5 Stress conditions
6 Sample size
7 Temperature
8 Failure criteria
9 Lifetime estimation method
10 Lifetime requirements
11 Reporting
Bibliography

Specifies the wafer level hot carrier test on NMOS and PMOS transistors. The test is intended to determine whether the single transistors in a certain (C)MOS process meet the required hot carrier lifetime.

Committee	CT 309
DevelopmentNote	Classificazione CEI 309-28. (07/2011)
DocumentType	Standard
Pages	16
PublisherName	Comitato Elettrotecnico Italiano
Status	Current

Standards	Relationship
EN 62416 : 2010	Identical
IEC 62416:2010	Identical

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CEI EN 62416 : 2011

SEMICONDUCTOR DEVICES - HOT CARRIER TEST ON MOS TRANSISTORS

Table of Contents

Abstract

General Product Information

International Equivalents

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