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I.S. EN 62417:2010

Current

Current

The latest, up-to-date edition.

SEMICONDUCTOR DEVICES - MOBILE ION TESTS FOR METAL-OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTORS (MOSFETS) (IEC 62417:2010 (EQV))

Available format(s)

Hardcopy , PDF

Language(s)

English

Published date

01-01-2010

Preview

For Harmonized Standards, check the EU site to confirm that the Standard is cited in the Official Journal.

Only cited Standards give presumption of conformance to New Approach Directives/Regulations.

FOREWORD
1 Scope
2 Abbreviations and letter symbols
3 General description
4 Test equipment
5 Test structures
6 Sample size
7 Conditions
8 Procedure
9 Criteria
10 Reporting

Gives a wafer level test procedure to determine the amount of positive mobile charge in oxide layers in metal-oxide semiconductor field effect transistors.

DevelopmentNote
For CENELEC adoptions of IEC publications, please check www.iec.ch to be sure that you have any corrigenda that may apply. (01/2017)
DocumentType
Standard
Pages
14
PublisherName
National Standards Authority of Ireland
Status
Current

Standards Relationship
IEC 62417:2010 Identical
EN 62417 : 2010 Identical

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