Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET)

Available format(s)

Hardcopy , PDF 1 User , PDF 3 Users , PDF 5 Users , PDF 9 Users

Language(s)

English - French

Published date

18-07-2006

Publisher

International Electrotechnical Committee

FOREWORD
INTRODUCTION
1 Scope
2 Terms and definitions
3 Test equipment
  3.1 Equipment
  3.2 Requirement for handling
4 Test sample
  4.1 Sample
  4.2 Packaging
  4.3 ESD protection circuit
5 Procedure
  5.1 Initial measurement and read point measurement
  5.2 Test
  5.3 Notes for field MOSFET
  5.4 Judgment
Annex A (informative) Wafer level reliability test
        (WLR test)
Bibliography

Provides a test procedure for a bias-temperature (BT) stability test of metal-oxide semiconductor, field-effect transistors (MOSFET)

Committee	TC 47
DevelopmentNote	Stability Date: 2020. (09/2017)
DocumentType	Standard
Pages	27
PublisherName	International Electrotechnical Committee
Status	Current

Standards	Relationship
NF EN 62373 : 2006	Identical
NEN EN IEC 62373 : 2006	Identical
I.S. EN 62373:2006	Identical
PN EN 62373 : 2006	Identical
SN EN 62373 : 2006	Identical
UNE-EN 62373:2006	Identical
BS EN 62373:2006	Identical
CEI EN 62373 : 2007	Identical
EN 62373 : 2006	Identical
DIN EN 62373:2007-01	Identical
BS EN 50289-3-7:2001	Identical