Semiconductor Device, Diode, Silicon, Unipolar Transient Voltage Suppressor, Types 1N8036 Through 1N8072, 1N8073 Through 1N8109, 1N8110 Through 1N8146, Through-Hole and Surface Mount Packages, Quality Levels JAN, JANTX, JANTXV, and JANS

Amended by

MIL-PRF-19500-772 Revision A Notice 1 - Validation:2019

Available format(s)

PDF

Language(s)

English

Published date

15-07-2014

Publisher

US Military Specs/Standards/Handbooks

1. SCOPE
2. APPLICABLE DOCUMENTS
3. REQUIREMENTS
4. VERIFICATION
5. PACKAGING
6. NOTES

Describes the performance requirements for 150 watt, 500 watt and 1,500 watt peak pulse power unipolar silicon transient voltage suppressor diodes.

This specification covers the performance requirements for 150 watt, 500 watt and 1,500 watt peak pulse power, unipolar silicon transient voltage suppressor diodes. Four levels of product assurance (JAN, JANTX, JANTXV, and JANS) are provided for each device type as specified in MIL-PRF-19500.

DocumentType	Standard
Pages	19
ProductNote	NEW CHILD NOT 1 2019 IS NOW ADDED.
PublisherName	US Military Specs/Standards/Handbooks
Status	Current

MIL-PRF-19500 Revision P:2010	SEMICONDUCTOR DEVICES, GENERAL SPECIFICATION FOR
MIL-STD-750 Revision F:2011	TEST METHODS FOR SEMICONDUCTOR DEVICES

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MIL-PRF-19500-772 Revision A:2014

Semiconductor Device, Diode, Silicon, Unipolar Transient Voltage Suppressor, Types 1N8036 Through 1N8072, 1N8073 Through 1N8109, 1N8110 Through 1N8146, Through-Hole and Surface Mount Packages, Quality Levels JAN, JANTX, JANTXV, and JANS

Table of Contents

Abstract

Scope

General Product Information

Standards Referencing This Book

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