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SEMI M3 : 2004

Withdrawn

Withdrawn

A Withdrawn Standard is one, which is removed from sale, and its unique number can no longer be used. The Standard can be withdrawn and not replaced, or it can be withdrawn and replaced by a Standard with a different number.

SPECIFICATIONS FOR POLISHED MONOCRYSTALLINE SAPPHIRE SUBSTRATES

Withdrawn date

01-07-2007

Published date

12-01-2013

This group of specifications cover the requirements in general for a range of 4 sizes of monocrystalline high-purity polished sapphire substrates that are used for silicon growth and ensuing semiconductor device manufacture. The Subordinate Documents include: M3.2 Standard for 2 inch Sapphire Substrates, M3.4 Standard for 3 inch Sapphire Substrates, M3.5 Standard for 100 mm Sapphire Substrates, M3.6 Standard for 3 inch Reclaimed Sapphire Substrates, M3.7 Standard for 125 mm Sapphire Substrates, M3.8 Standard for 150 mm Sapphire Substrates.

DevelopmentNote
Not available for sale from ILI, customer to contact SEMI. (05/2001) Supersedes SEMI M3.2, M3.4, M3.5, M3.6, M3.7, and M3.8. (02/2004)
DocumentType
Standard
PublisherName
Semiconductor Equipment & Materials Institute
Status
Withdrawn

SEMI M4 : NOV 2003 SPECIFICATIONS FOR SOS EPITAXIAL WAFERS
ASTM F 2358 : 2004 Standard Guide for Measuring Characteristics of Sapphire Substrates
SEMI M65 : 2016 SPECIFICATION FOR SAPPHIRE SUBSTRATES TO USE FOR COMPOUND SEMICONDUCTOR EPITAXIAL WAFERS

SEMI MF533 : 2010(R2016) TEST METHODS FOR THICKNESS AND THICKNESS VARIATION OF SILICON WAFERS
SEMI MF928 : 2017 TEST METHOD FOR EDGE CONTOUR OF CIRCULAR SEMICONDUCTOR WAFERS AND RIGID DISK SUBSTRATES
SEMI MF534 : 2007 TEST METHOD FOR BOW OF SILICON WAFERS
SEMI MF2074 : 2012 (R2018) GUIDE FOR MEASURING DIAMETER OF SILICON AND OTHER SEMICONDUCTOR WAFERS
SEMI MF1810 : 2010(R2015) TEST METHOD FOR COUNTING PREFERENTIALLY ETCHED OR DECORATED SURFACE DEFECTS IN SILICON WAFERS
SEMI MF523 : 2007(R2018) PRACTICE FOR UNAIDED VISUAL INSPECTION OF POLISHED SILICON WAFER SURFACES
SEMI MF847 : 2016 TEST METHOD FOR MEASURING CRYSTALLOGRAPHIC ORIENTATION OF FLATS ON SINGLE CRYSTAL SILICON WAFERS BY X-RAY TECHNIQUES
SEMI MF671:2012 TEST METHOD FOR MEASURING FLAT LENGTH ON WAFERS OF SILICON AND OTHER ELECTRONIC MATERIALS

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