BS IEC 63068-2. Semiconductor devices. Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices. Part 2. Test method for defects using optical inspection

Available format(s)

Hardcopy , PDF

Language(s)

English

Published date

10-08-2018

Publisher

British Standards Institution

This International Standard describes definitions and guidance in use of optical inspection for detecting defects in commercially available silicon carbide (SiC) homoepitaxial wafers. Additionally, this part exemplifies optical images to enable the detection and categorization of defects for SiC homoepitaxial wafers. The standard deals with a non-destructive test method for defects so that destructive methods such as preferential etching are out of scope in this standard.

Committee	EPL/47
DocumentType	Standard
Pages	0
ProductNote	Warning: this draft is not current beyond its expiry date for comments.
PublisherName	British Standards Institution
Status	Current