BS 6493-1.4:1992

Superseded

View Superseded by

Semiconductor devices. Discrete devices Recommendations for microwave diodes and transistors - Recommendations for microwave devices

Available format(s)

Hardcopy , PDF

Superseded date

29-02-2008

Language(s)

English

Published date

28-06-2002

Publisher

British Standards Institution

Committees responsible
National foreword
Recommendations
Chapter I. General
1. Introductory note
2. Scope
3. Letter symbols
Chapter II. Variable capacitance, snap-off diodes and
fast-switching schottky diodes
Section 1. Variable capacitance diodes
1. General
2. Terminology and letter symbols
3. Essential ratings and characteristics
4. Measurement methods
Section 2. Snap-off diodes, Schottky diodes
1. General
2. Terminology and letter symbols
3. Essential ratings and characteristics
4. Measurement methods
Chapter III. Mixer diodes and detector diodes
Section 1. Mixer diodes used in radar applications
1. General
2. Terminology and letter symbols
3. Essential ratings and characteristics
4. Measurement methods
Section 2. Mixer diodes used in communication
applications
1. General
2. Terminology and letter symbols
3. Essential ratings and characteristics
4. Measurement methods
Section 3. Detector diodes
Chapter IV. Impatt diodes
Section 1. Impatt diodes amplifiers
1. General
2. Terminology and letter symbols
3. Essential ratings and characteristics
Section 2. Impatt diodes oscillators
Chapter V. Gunn diodes
1. General (under consideration)
2. Terminology and letter symbols
3. Essential ratings and characteristics (under
consideration)
4. Measurement methods
Chapter VI. Bipolar transistors
Chapter VII. Field effect transistors
1. General
2. Terminology and letter symbols
3. Essential ratings and characteristics
4. Measurement methods
Chapter VIII. Integrated circuit microwave
amplifiers
1. Terminology
2. Essential ratings and characteristics
3. Measuring methods
Chapter IX. Assessment and reliability -
Specific requirements
1 Electrical test conditions
2 Failure criteria and failure-defining
characteristics for acceptance tests
3 Failure criteria and failure-defining
characteristics for reliability tests
4 Procedure in case of a testing error

Supplies terminology and letter symbols, essential ratings and characteristics and measurement methods for several categories of microwave diodes and transistors, including variable capacitance diodes and snap-off diodes; mixer diodes and detector diodes; avalanche diodes; Gunn diodes; bipolar transistors; and field-effect transistors.

Committee	EPL/47
DevelopmentNote	Supersedes BS 3363:SUPP1(1981) and BS 3363:SUPP2(1981) (07/2002)
DocumentType	Standard
Pages	136
PublisherName	British Standards Institution
Status	Superseded
SupersededBy	BS IEC 60747-4:2007+A1:2017 BS IEC 60747-4 : 2007
Supersedes	BS 3363:Supplement No. 2:1981 BS 3363:Supplement No. 1:1981

BS 6493-1.1:1984	Semiconductor devices. Discrete devices General
BS 6493-1.8:1985	Semiconductor devices. Discrete devices Recommendations for field-effect transistors