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IEC 62047-9:2011

Current

Current

The latest, up-to-date edition.

Semiconductor devices - Micro-electromechanical devices - Part 9: Wafer to wafer bonding strength measurement for MEMS

Available format(s)

Hardcopy , PDF , PDF 3 Users , PDF 5 Users , PDF 9 Users

Published date

13-07-2011

FOREWORD
1 Scope
2 Normative references
3 Measurement methods
Annex A (informative) - Example of bonding force
Annex B (informative) - An example of the fabrication
        process for three-point bending specimens
Bibliography

IEC 62047-9:2011 describes bonding strength measurement method of wafer to wafer bonding, type of bonding process such as silicon to silicon fusion bonding, silicon to glass anodic bonding, etc., and applicable structure size during MEMS processing/assembly. The applicable wafer thickness is in the range of 10 ohmm to several millimeters. The contents of the corrigendum of March 2012 have been included in this copy.

DevelopmentNote
Stability Date: 2018. (09/2017)
DocumentType
Standard
Pages
49
PublisherName
International Electrotechnical Committee
Status
Current

Standards Relationship
NF EN 62047-9 : 2012 Identical
NBN EN 62047-9 : 2011 Identical
NEN EN IEC 62047-9 : 2011 Identical
I.S. EN 62047-9:2011 Identical
PN EN 62047-9 : 2012 Identical
UNE-EN 62047-9:2011 Identical
BS EN 62047-9:2011 Identical
CEI EN 62047-9 : 2012 Identical
EN 62047-9:2011 Identical
DIN EN 62047-9:2012-03 Identical

BS EN 62047-15:2015 Semiconductor devices. Micro-electromechanical devices Test method of bonding strength between PDMS and glass
17/30352696 DC : DRAFT SEP 2017 BS IEC 62047-31 ED1.0 - SEMICONDUCTOR DEVICES - MICRO-ELECTROMECHANICAL DEVICES - PART 31: FOUR-POINT BENDING TEST METHOD FOR INTERFACIAL ADHESION ENERGY OF LAYERED MEMS MATERIALS
I.S. EN 62047-15:2015 SEMICONDUCTOR DEVICES - MICRO-ELECTROMECHANICAL DEVICES - PART 15: TEST METHOD OF BONDING STRENGTH BETWEEN PDMS AND GLASS
CEI EN 62047-15 : 2016 SEMICONDUCTOR DEVICES - MICRO-ELECTROMECHANICAL DEVICES - PART 15: TEST METHOD OF BONDING STRENGTH BETWEEN PDMS AND GLASS
IEC 62047-15:2015 Semiconductor devices - Micro-electromechanical devices - Part 15: Test method of bonding strength between PDMS and glass
14/30296140 DC : 0 BS EN 62047-25 - SEMICONDUCTOR DEVICES - MICRO-ELECTROMECHANICAL DEVICES - PART 25: SILICON-BASED MEMS FABRICATION TECHNOLOGY - MEASUREMENT METHOD OF PULL-PRESS AND SHEARING STRENGTH OF MICRO BONDING AREA
14/30217668 DC : 0 BS EN 62047-15 - SEMICONDUCTOR DEVICES - MICRO - ELECTROMECHANICAL DEVICES - PART 14: FORMING LIMIT MEASURING METHOD OF METALLIC FILM MATERIALS
EN 62047-15:2015 Semiconductor devices - Micro-electromechanical devices - Part 15: Test method of bonding strength between PDMS and glass

IEC 62047-4:2008 Semiconductor devices - Micro-electromechanical devices - Part 4: Generic specification for MEMS
ISO 6892-1:2016 Metallic materials Tensile testing Part 1: Method of test at room temperature
IEC 62047-2:2006 Semiconductor devices - Micro-electromechanical devices - Part 2: Tensile testing method of thin film materials
ASTM E 8M : 2004 Standard Test Methods for Tension Testing of Metallic Materials [Metric] (Withdrawn 2008)
IEC 60747-14-1:2010 Semiconductor devices - Part 14-1: Semiconductor sensors - Generic specification for sensors
IEC 60749-19:2003+AMD1:2010 CSV Semiconductor devices - Mechanical and climatic test methods - Part 19: Die shear strength

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