MIL-PRF-19500-683 Revision F:2016

Superseded

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TRANSISTOR, FIELD EFFECT, N-CHANNEL, RADIATION HARDENED, ENCAPSULATED (SURFACE MOUNT AND CARRIER BOARD PACKAGES), TYPE 2N7467, JANTXVR, F, G, AND H AND JANSR, F, G, AND H

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Superseded date

22-12-2021

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English

Publisher

US Military Specs/Standards/Handbooks

1. SCOPE
2. APPLICABLE DOCUMENTS
3. REQUIREMENTS
4. VERIFICATION
5. PACKAGING
6. NOTES

Describes the performance requirements for an N-channel, enhancement-mode power MOSFET transistor with radiation hardened total dose and single event (SEE) effects ratings, with avalanche energy maximum rating (E[AS]) and maximum avalanche current (I[AS]).

Committee	FSC 5961
DocumentType	Standard
Pages	24
PublisherName	US Military Specs/Standards/Handbooks
Status	Superseded
SupersededBy	MIL-PRF-19500-683 Revision G:2018

MIL-PRF-19500 Revision P:2010	SEMICONDUCTOR DEVICES, GENERAL SPECIFICATION FOR
MIL-STD-750 Revision F:2011	TEST METHODS FOR SEMICONDUCTOR DEVICES

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MIL-PRF-19500-683 Revision F:2016

TRANSISTOR, FIELD EFFECT, N-CHANNEL, RADIATION HARDENED, ENCAPSULATED (SURFACE MOUNT AND CARRIER BOARD PACKAGES), TYPE 2N7467, JANTXVR, F, G, AND H AND JANSR, F, G, AND H

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