SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7002, 2N7002T2, AND 2N7002UB, JAN, JANTX, JANTXV, AND JANS

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MIL-PRF-19500-688 Revision B Notice 2 - Validation:2021

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US Military Specs/Standards/Handbooks

1. SCOPE
2. APPLICABLE DOCUMENTS
3. REQUIREMENTS
4. VERIFICATION
5. PACKAGING
6. NOTES

Describes the performance requirements for a N-channel, enhancement-mode, low-threshold logic level, high frequency, high switching speed MOSFET, transistor.

Committee	FSC 5961
DevelopmentNote	B NOTICE 1 - Notice of Validation. (11/2016) NEW CHILD NOT 2 2021 IS NOW ADD
DocumentType	Standard
Pages	27
ProductNote	NEW CHILD NOT 2 2021 IS NOW ADD
PublisherName	US Military Specs/Standards/Handbooks
Status	Current

MIL-PRF-19500 Revision P:2010	SEMICONDUCTOR DEVICES, GENERAL SPECIFICATION FOR
MIL-STD-750 Revision F:2011	TEST METHODS FOR SEMICONDUCTOR DEVICES

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MIL-PRF-19500-688 Revision B:2012

SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7002, 2N7002T2, AND 2N7002UB, JAN, JANTX, JANTXV, AND JANS

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