Transistor, Field Effect Radiation Hardened, N-Channel, Silicon, Through Hole and Surface Mount, Types 2N7606 and 2N7607 Quality Levels JANTXV and JANS

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Published date

12-12-2014

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US Military Specs/Standards/Handbooks

1. SCOPE
2. APPLICABLE DOCUMENTS
3. REQUIREMENTS
4. VERIFICATION
5. PACKAGING
6. NOTES

Specifies the performance requirements for a N-channel, enhancement-mode, radiation hardened (total dose and single event effects (SEE)), low-threshold logic level, MOSFET, transistor.

This specification covers the performance requirements for a N-channel, enhancement-mode, radiation hardened (total dose and single event effects (SEE)), low-threshold logic level, MOSFET, transistor. Two levels of product assurance (JANTXV and JANS) are provided for each device type as specified in MIL-PRF-19500, with avalanche energy maximum rating (EAS) and maximum avalanche current (IAS).

DocumentType	Standard
Pages	36
PublisherName	US Military Specs/Standards/Handbooks
Status	Current

MIL-PRF-19500 Revision P:2010	SEMICONDUCTOR DEVICES, GENERAL SPECIFICATION FOR
MIL-STD-750 Revision F:2011	TEST METHODS FOR SEMICONDUCTOR DEVICES

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MIL-PRF-19500-756 Revision A:2014

Transistor, Field Effect Radiation Hardened, N-Channel, Silicon, Through Hole and Surface Mount, Types 2N7606 and 2N7607 Quality Levels JANTXV and JANS

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