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MIL-PRF-19500-765 Revision B:2016

Current

Current

The latest, up-to-date edition.

Semiconductor Device, Diode, Silicon, Dual Schottky, Common Cathode, Encapsulated (Through-Hole and Surface Mount), Type 1N7072 and 1N7078 Quality Levels JAN, JANTX, JANTXV, and JANS

Available format(s)

PDF

Language(s)

English

Published date

14-03-2016

1. SCOPE
2. APPLICABLE DOCUMENTS
3. REQUIREMENTS
4. VERIFICATION
5. PACKAGING
6. NOTES

Describes the performance requirements for a silicon, dual Schottky, center-tap power rectifier diode for use in high frequency switching power supplies and resonant power converters.

This specification covers the performance requirements for a silicon, dual Schottky, center-tap, power
rectifier diode for use in high frequency switching power supplies and resonant power converters. Four levels of product assurance (JAN, JANTX, JANTXV, and JANS) are provided for each encapsulated device.

DocumentType
Standard
Pages
17
PublisherName
US Military Specs/Standards/Handbooks
Status
Current

MIL-PRF-19500 Revision P:2010 SEMICONDUCTOR DEVICES, GENERAL SPECIFICATION FOR
MIL-STD-750 Revision F:2011 TEST METHODS FOR SEMICONDUCTOR DEVICES

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£16.70
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