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SN EN 60749-22 : 2003

Current

Current

The latest, up-to-date edition.

SEMICONDUCTOR DEVICES - MECHANICAL AND CLIMATIC TEST METHODS - PART 22: BOND STRENGTH

Published date

12-01-2013

INTRODUCTION
1 Scope and object
  1.1 General description of the test
  1.2 Description of the test apparatus (for all methods)
2 Methods A and B (see also annex A)
  2.1 Scope
  2.2 General description of the test
3 Method C
  3.1 Scope
  3.2 Method C: Bond peel
4 Method D
  4.1 Scope
  4.2 Method D: Bond shear (applied to flip chip)
5 Methods E and F
  5.1 Scope
  5.2 Method E: Push-off test
  5.3 Method F: Pull-off test
  5.4 Failure criteria for both methods E and F:
  5.5 Force to be applied (both methods)
6 Method G: Wire ball shear test
  6.1 Scope
  6.2 General description
  6.3 Terms and definitions
  6.4 Equipment and material
  6.5 Procedure
  6.6 Acceptable test limits
7 Information to be given in the relevant specification
Annex A (normative) Guidance

Applies to semiconductor devices (discrete devices and integrated circuits). Measures bond strength or determine compliance with specified bond strength requirements.

DocumentType
Standard
PublisherName
Swiss Standards
Status
Current

Standards Relationship
DIN EN 60749-22:2003-12 Identical
I.S. EN 60749-22:2003 Identical
EN 60749-22:2003 Identical
BS EN 60749-22:2003 Identical
UNE-EN 60749-22:2004 Identical
IEC 60749-22:2002 Identical

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