ASTM F 121 : 1983 : EDT 1

Name: ASTM F 121 : 1983 : EDT 1
Brand: ASTM
Price: 66.00 USD

Superseded

Test Method for Interstitial Atomic Oxygen Content of Silicon by Infrared Absorption (Withdrawn 1989)

Available format(s)

Hardcopy , PDF

Superseded date

01-01-2014

Language(s)

English

Published date

01-01-2014

Publisher

American Society for Testing and Materials

Determines content of interstitial oxygen in single crystal silicon; can be used on crystal with recordable transmission of 10- m infrared radiation. Useful range of oxygen concentration measurable is from 50 ppb atomic (2.5 x 10 atoms/cm ) to maximum amount of interstitial oxygen soluble in silicon.

DocumentType	Test Method
Pages	3
PublisherName	American Society for Testing and Materials
Status	Superseded
Supersedes	ASTM F 121 : 1983

MIL-STD-989 Base Document:1991	CERTIFICATION REQUIREMENTS FOR JAN SEMICONDUCTOR DEVICES
ASTM F 120 : 1988	Practices for Determination of the Concentration of Impurities in Single Crystal Semiconductor Materials by Infrared Absorption Spectroscopy (Withdrawn 1993)

ASTM E 177 : 2014 : REDLINE	Standard Practice for Use of the Terms Precision and Bias in ASTM Test Methods
ASTM F 120 : 1988	Practices for Determination of the Concentration of Impurities in Single Crystal Semiconductor Materials by Infrared Absorption Spectroscopy (Withdrawn 1993)
ASTM E 168 : 2016	Standard Practices for General Techniques of Infrared Quantitative Analysis