ASTM F 617 : 2000

Name: ASTM F 617 : 2000
Brand: ASTM
Price: 75.00 USD

Withdrawn

Standard Test Method for Measuring MOSFET Linear Threshold Voltage (Withdrawn 2006)

Available format(s)

Hardcopy , PDF

Withdrawn date

07-13-2006

Language(s)

English

Published date

06-10-2000

Publisher

American Society for Testing and Materials

CONTAINED IN VOL. 10.04, 2006 Defines test requirements for the measurement of MOSFET linear threshold voltage under very low sweep rate or d-c conditions.

1.1 This test method covers the measurement of MOSFET (see Note 1) linear threshold voltage under very low sweep rate or d-c conditions. It is a d-c conductance method applicable in the linear region of MOSFET operation where a drain voltage V_D of approximately 0.1 V is typical.

Note 1--MOS is an acronym for metal-oxide semiconductor; FET is an acronym for field-effect transistor.

1.2 This test method is applicable to both enhancement-mode and depletion-mode MOSFETs, and for both silicon-on-insulator (SOI) and bulk-silicon MOSFETs. The test method specifies positive voltage and current conventions specifically applicable to n-channel MOSFETs. The substitution of negative voltage and negative current make the test method directly applicable to p-channel MOSFETs.

1.3 The values stated in International System of Units (SI) are to be regarded as standard. No other units of measurement are included in this test method.

1.4 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

Committee	F 01
DevelopmentNote	Supersedes ASTM F 617M (07/2004)
DocumentType	Test Method
Pages	6
PublisherName	American Society for Testing and Materials
Status	Withdrawn

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