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BS EN 62047-10:2011

Current

Current

The latest, up-to-date edition.

Semiconductor devices. Micro-electromechanical devices Micro-pillar compression test for MEMS materials

Available format(s)

Hardcopy , PDF

Language(s)

English

Published date

09-30-2011

FOREWORD
1 Scope
2 Normative references
3 Symbols and designations
4 Test piece
5 Testing method and test apparatus
6 Test report
Annex A (informative) - Error estimation using
        finite element method
Bibliography
Annex ZA (normative) - Normative references to
         international publications with their
         corresponding European publications

Describes micro-pillar compression test method to measure compressive properties of MEMS materials with high accuracy, repeatability, and moderate effort of specimen fabrication.

This part of IEC 62047 specifies micro-pillar compression test method to measure compressive properties of MEMS materials with high accuracy, repeatability, and moderate effort of specimen fabrication. The uniaxial compressive stress-strain relationship of a specimen is measured, and the compressive modulus of elasticity and yield strength can be obtained.

The test piece is a cylindrical pillar fabricated on a rigid (or highly stiff) substrate by micro-machining technologies, and its aspect ratio (ratio of pillar diameter to pillar height) should be more than 3. This standard is applicable to metallic, ceramic, and polymeric materials.

Committee
EPL/47
DevelopmentNote
Supersedes 10/30211442 DC. (09/2011)
DocumentType
Standard
Pages
18
PublisherName
British Standards Institution
Status
Current
Supersedes

Standards Relationship
EN 62047-10 : 2011 Identical

ASTM E 9 : 2009 Standard Test Methods of Compression Testing of Metallic Materials at Room Temperature
IEC 62047-8:2011 Semiconductor devices - Micro-electromechanical devices - Part 8: Strip bending test method for tensile property measurement of thin films
EN 62047-8:2011 Semiconductor devices - Micro-electromechanical devices - Part 8: Strip bending test method for tensile property measurement of thin films

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