SOLAR WAFERS - DATA SHEET AND PRODUCT INFORMATION FOR CRYSTALLINE SILICON WAFERS FOR SOLAR CELL MANUFACTURING

Available format(s)

Hardcopy , PDF

Language(s)

English

Published date

01-01-2010

Publisher

Comitato Elettrotecnico Italiano

1 Scope
2 Normative references
3 Terms, definitions and acronyms
4 Crystallisation process
5 Product characteristics
6 Packaging, marking and storage
7 Major changes of product and processes
8 Wafer thickness
9 Variations in thickness
10 Waviness and warping
11 Grooves and step type saw mark
12 Corrosion rate
13 Determining carrier lifetime measured on as cut wafer
14 Determining minority carrier bulk lifetime measured
   on passivated wafers (laboratory measurement)
15 Electrical resistivity of multi and mono crystalline
   semiconductor wafers
16 Method for the measurement of substitutional atomic
   carbon and interstitial oxygen content in silicon used
   as solar material
Annex A (informative) - Geometric dimensions, surfaces
        and edge characteristics
Annex B (informative) - Optional requirements
Bibliography

Specifies data sheet and product information for crystalline silicon (Si) - solar wafers and measurement methods for wafer properties.

Committee	CT 82
DevelopmentNote	Classificazione CEI 82-33. (06/2010)
DocumentType	Standard
Pages	38
PublisherName	Comitato Elettrotecnico Italiano
Status	Current

Standards	Relationship
EN 50513:2009	Identical

DIN 50441-5:2001-04	TESTING OF MATERIALS FOR SEMICONDUCTOR TECHNOLOGY - DETERMINATION OF THE GEOMETRIC DIMENSIONS OF SEMICONDUCTOR WAFERS - PART 5: TERMS OF SHAPE AND FLATNESS DEVIATION
DIN 50434:1986-02	TESTING OF MATERIALS FOR SEMICONDUCTOR TECHNOLOGY; DETECTION OF CRYSTAL DEFECTS IN MONOCRYSTALLINE SILICON USING ETCHING TECHNIQUES ON (111) AND (100) SURFACES
DIN 50432:1980-09	TESTING OF SEMI-CONDUCTING INORGANIC MATERIALS; DETERMINATION OF THE CONDUCTIVITY TYPE OF SILICON OR GERMANIUM BY MEANS OF RECTIFICATION TEST OR HOT-PROBE
DIN 50438-2:1982-08	TESTING OF MATERIALS FOR SEMICONDUCTOR TECHNOLOGY; DETERMINATION OF IMPURITY CONTENT IN SILICON BY INFRARED ABSORPTION; CARBON
DIN 50431:1988-05	TESTING OF SEMICONDUCTOR MATERIALS; MEASUREMENT OF THE RESISTIVITY OF SILICON OR GERMANIUM SINGLE CRYSTALS BY MEANS OF THE FOUR PROBE DIRECT CURRENT METHOD WITH CO-LINEAR ARRAY
DIN 50441-1:1996-07	TESTING OF MATERIALS FOR SEMICONDUCTOR TECHNOLOGY - DETERMINATION OF THE GEOMETRIC DIMENSIONS OF SEMICONDUCTOR WAFERS - PART 1: THICKNESS AND THICKNESS VARIATION

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CEI EN 50513 : 2010

SOLAR WAFERS - DATA SHEET AND PRODUCT INFORMATION FOR CRYSTALLINE SILICON WAFERS FOR SOLAR CELL MANUFACTURING

Table of Contents

Abstract

General Product Information

International Equivalents

Standards Referencing This Book

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