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DIN EN 60749-22:2003-12

Current

Current

The latest, up-to-date edition.

SEMICONDUCTOR DEVICES - MECHANICAL AND CLIMATIC TEST METHODS - PART 22: BOND STRENGTH

Available format(s)

Hardcopy , PDF

Language(s)

German

Published date

01-01-2003

INTRODUCTION
1 Scope and object
  1.1 General description of the test
  1.2 Description of the test apparatus (for all methods)
2 Methods A and B (see also annex A)
  2.1 Scope
  2.2 General description of the test
3 Method C
  3.1 Scope
  3.2 Method C: Bond peel
4 Method D
  4.1 Scope
  4.2 Method D: Bond shear (applied to flip chip)
5 Methods E and F
  5.1 Scope
  5.2 Method E: Push-off test
  5.3 Method F: Pull-off test
  5.4 Failure criteria for both methods E and F:
  5.5 Force to be applied (both methods)
6 Method G: Wire ball shear test
  6.1 Scope
  6.2 General description
  6.3 Terms and definitions
  6.4 Equipment and material
  6.5 Procedure
  6.6 Acceptable test limits
7 Information to be given in the relevant specification
Annex A (normative) Guidance

Applies to semiconductor devices (discrete devices and integrated circuits). Measures bond strength or determine compliance with specified bond strength requirements.

DevelopmentNote
Supersedes DIN EN 60749 (06/2005)
DocumentType
Standard
Pages
20
PublisherName
German Institute for Standardisation (Deutsches Institut für Normung)
Status
Current
Supersedes

Standards Relationship
IEC 60749-22:2002 Identical
BS EN 60749-22:2003 Identical
NBN EN 60749-22 : 2004 Identical
I.S. EN 60749-22:2003 Identical
EN 60749-22:2003 Identical
NF EN 60749-22 : 2003 Identical
UNE-EN 60749-22:2004 Identical
SN EN 60749-22 : 2003 Identical

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