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SEMI 3D8 : 2014

SEMI 3D8 : 2014

Superseded

Superseded

A superseded Standard is one, which is fully replaced by another Standard, which is a new edition of the same Standard.

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superseded

A superseded Standard is one, which is fully replaced by another Standard, which is a new edition of the same Standard.

GUIDE FOR DESCRIBING SILICON WAFERS FOR USE AS 300 MM CARRIER WAFERS IN A 3DS-IC TEMPORARY BOND-DEBOND (TBDB) PROCESS

Superseded date

12-07-2021

Published date

06-09-2014

Publisher

Semiconductor Equipment & Materials Institute

Pertains to address the needs of the 3D Stacked IC (3DS-IC) industry by providing the tools needed to procure virgin silicon carrier wafers to be used in a 3DS-IC process.

DevelopmentNote
Not available for sale from ILI, customer to contact SEMI. (06/2014)
DocumentType
Standard
PublisherName
Semiconductor Equipment & Materials Institute
Status
Superseded
SupersededBy

SEMI 3D4 : 2015 GUIDE FOR METROLOGY FOR MEASURING THICKNESS, TOTAL THICKNESS VARIATION (TTV), BOW, WARP/SORI, AND FLATNESS OF BONDED WAFER STACKS

SEMI MF81 : 2005(R2016) TEST METHOD FOR MEASURING RADIAL RESISTIVITY VARIATION ON SILICON WAFERS
SEMI MF1391 : 2007(R2012) TEST METHOD FOR INTERSTITIAL OXYGEN CONTENT OF SILICON BY INFRARED ABSORPTION WITH SHORT BASELINE
SEMI M59 : 2014 TERMINOLOGY FOR SILICON TECHNOLOGY
SEMI M45 : 2010(R2017) SPECIFICATION FOR 300 MM WAFER SHIPPING SYSTEM
SEMI MF1530 : 2007(R2018) TEST METHOD FOR MEASURING FLATNESS, THICKNESS, AND TOTAL THICKNESS VARIATION ON SILICON WAFERS BY AUTOMATED NON-CONTACT SCANNING
SEMI MF951 : 2005(R2016) TEST METHOD FOR DETERMINATION OF RADIAL INTERSTITIAL OXYGEN VARIATION IN SILICON WAFERS

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