Customer Support: 131 242

i2i Intertek.com
  • There are no items in your cart
We noticed you’re not on the correct regional site. Switch to our AMERICAS site for the best experience.
Go to AMERICAS site
Dismiss alert
Please enter a keyword to search
Advanced search
Home
ASTM
ASTM F 1241 : 1995 : R2000

ASTM F 1241 : 1995 : R2000

Withdrawn

Withdrawn

A Withdrawn Standard is one, which is removed from sale, and its unique number can no longer be used. The Standard can be withdrawn and not replaced, or it can be withdrawn and replaced by a Standard with a different number.

Standard Terminology of Silicon Technology (Withdrawn 2003)

Available format(s)

Hardcopy , PDF

Withdrawn date

05-11-2013

Language(s)

English

Published date

10-06-2000

Publisher

American Society for Testing and Materials

CONTAINED IN VOL. 10.05, 2001 Covers terms and definitions used in relation to semiconductor grade silicon crystal and wafers. Covers terms describing attributes of silicon wafers as specified in SEMI Specifications M1 and SEMI Format M18.

This standard was transferred to SEMI (www.semi.org) May 2003

1.1 This terminology covers terms and definition used in relation to semiconductor grade silicon crystal and wafers.

1.2 This terminology covers terms describing attributes of silicon wafers as specified in SEMI Specifications M1 and SEMI Format M18. These attributes include electrical, structural, chemical, and mechanical characteristics of polished and epitaxial wafers as well as surface defects and contamination.

1.3 This terminology is applicable for use in connection with research, developement, process control, procurement, and inspection of silicon material.

1.4 Originally the terms and definitions included in this standard were extracted from other ASTM Standards relating to silicon technology. The original source standards for such terms are identified by their designations immediately following the definition. All such standards are found in this volume of the Annual Book of ASTM Standards . More recently, new or revised terms and definitions have been balloted directly for inclusion in this standard; these terms have no designation following the definition.

1.5 Almost all of the terms listed are nouns; in other cases, the part of speech is given explicitly immediately following the term.

Committee
F 01
DocumentType
Reference Material
Pages
8
PublisherName
American Society for Testing and Materials
Status
Withdrawn

ASTM F 1723 : 1996 Standard Practice for Evaluation of Polycrystalline Silicon Rods by Float-Zone Crystal Growth and Spectroscopy
ASTM F 1620 : 1996 Standard Practice for Calibrating a Scanning Surface Inspection System Using Monodisperse Polystyrene Latex Spheres Deposited on Polished or Epitaxial Wafer Surfaces (Withdrawn 2003)
ASTM F 1619 : 1995 : R2000 : EDT 1 Standard Test Method for Measurement of Interstitial Oxygen Content of Silicon Wafers by Infrared Absorption Spectroscopy with <i>p</i>-Polarized Radiation Incident at the Brewster Angle (Withdrawn 2003)
ASTM F 1621 : 1996 Standard Practice for Determining the Positional Accuracy Capabilities of a Scanning Surface Inspection System (Withdrawn 2003)
ASTM F 1630 : 2000 Standard Test Method for Low Temperature FT-IR Analysis of Single Crystal Silicon for III-V Impurities (Withdrawn 2003)
ASTM F 1451 : 1992 : R1999 Standard Test Method for Measuring Sori on Silicon Wafers by Automated Noncontact Scanning (Withdrawn 2003)
ASTM F 1708 : 2002 Standard Practice for Evaluation of Granular Polysilicon by Meter-Zoner Spectroscopies (Withdrawn 2003)
ASTM F 2166 : 2002 Standard Practices for Monitoring Non-Contact Dielectric Characterization Systems Through Use of Special Reference Wafers (Withdrawn 2003)
ASTM F 1391 : 1993 : R2000 Standard Test Method for Substitutional Atomic Carbon Content of Silicon by Infrared Absorption (Withdrawn 2003)
ASTM F 154 : 2002 Standard Guide for Identification of Structures and Contaminants Seen on Specular Silicon Surfaces (Withdrawn 2003)
ASTM F 1388 : 1992 : R2000 Standard Test Method for Generation Lifetime and Generation Velocity of Silicon Material by Capacitance-Time Measurements of Metal-Oxide-Silicon (MOS) Capacitors (Withdrawn 2003)
ASTM F 1535 : 2000 Standard Test Method for Carrier Recombination Lifetime in Silicon Wafers by Noncontact Measurement of Photoconductivity Decay by Microwave Reflectance (Withdrawn 2003)
ASTM F 1619 : 1995 : R2000 Standard Test Method for Measurement of Interstitial Oxygen Content of Silicon Wafers by Infrared Absorption Spectroscopy with <i>p</i>-Polarized Radiation Incident at the Brewster Angle

SEMI M18 : 2012 GUIDE FOR DEVELOPING SPECIFICATION FORMS FOR ORDER ENTRY OF SILICON WAFERS

View more information
$125.58
Including GST where applicable
AUD
CAD
CHF
CNY
DKK
EUR
GBP
HKD
IDR
INR
JPY
KRW
MXN
NOK
NZD
SEK
SGD
USD
ZAR
Hardcopy - English
PDF - English
01
02
03
04
05
06
07
08
09
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50

Access your standards online with a subscription

Features

  • Simple online access to standards, technical information and regulations.

  • Critical updates of standards and customisable alerts and notifications.

  • Multi-user online standards collection: secure, flexible and cost effective.

Learn more on subscription solutions

or

Get in touch with us

Need help?
Call us on 131 242, then click here to start a Screen Sharing session
so we can help right away! Learn more