SEMI MF1619 : 2012(R2018)

Name: SEMI MF1619 : 2012(R2018)
Brand: SEMI

Superseded

TEST METHOD FOR MEASUREMENT OF INTERSTITIAL OXYGEN CONTENT OF SILICON WAFERS BY INFRARED ABSORPTION SPECTROSCOPY WITH P-POLARIZED RADIATION INCIDENT AT THE BREWSTER ANGLE

Available format(s)

Hardcopy

Superseded date

16-11-2023

Language(s)

English

Published date

04-08-2018

Publisher

Semiconductor Equipment & Materials Institute

Gives a means for reducing the influence of the back surface condition on the measurement.

DevelopmentNote	Not available for sale from ILI, customer to contact SEMI. (02/2005) Also available in CD-ROM. (10/2007)
DocumentType	Revision
Pages	0
PublisherName	Semiconductor Equipment & Materials Institute
Status	Superseded
SupersededBy	SEMI MF1619:2007(R2023)

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