SEMI MF1726 : 2010(R2015)
Current
The latest, up-to-date edition.
PRACTICE FOR ANALYSIS OF CRYSTALLOGRAPHIC PERFECTION OF SILICON WAFERS
12-01-2013
Specifies the determination of the density of crystallographic defects in unpatterned polished and epitaxial silicon wafers. Epitaxial silicon wafers may exhibit dislocations, hillocks, shallow pits or epitaxial stacking faults, while polished wafers may exhibit several forms of crystallographic defects or surface damage.
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