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SEMI M57 : 2016

SEMI M57 : 2016

Superseded

Superseded

A superseded Standard is one, which is fully replaced by another Standard, which is a new edition of the same Standard.

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superseded

A superseded Standard is one, which is fully replaced by another Standard, which is a new edition of the same Standard.

SPECIFICATION FOR SILICON ANNEALED WAFERS

Superseded date

13-12-2021

Published date

12-01-2013

Publisher

Semiconductor Equipment & Materials Institute

Specifies information for developing specifications for silicon annealed wafers used to fabricate semiconductor devices and integrated circuits.

DevelopmentNote
Not available for sale from ILI, customer to contact SEMI. (02/2005)
DocumentType
Standard
PublisherName
Semiconductor Equipment & Materials Institute
Status
Superseded
SupersededBy

SEMI M1 : 2017 SPECIFICATION FOR POLISHED SINGLE CRYSTAL SILICON WAFERS
SEMI MF154 : 2005(R2016) GUIDE FOR IDENTIFICATION OF STRUCTURES AND CONTAMINANTS SEEN ON SPECULAR SILICON SURFACES
SEMI M18 : 2012 GUIDE FOR DEVELOPING SPECIFICATION FORMS FOR ORDER ENTRY OF SILICON WAFERS
SEMI M32 : 2007 GUIDE TO STATISTICAL SPECIFICATIONS

SEMI MF81 : 2005(R2016) TEST METHOD FOR MEASURING RADIAL RESISTIVITY VARIATION ON SILICON WAFERS
SEMI MF1535 : 2015 TEST METHOD FOR CARRIER RECOMBINATION LIFETIME IN ELECTRONIC-GRADE SILICON WAFERS BY NONCONTACT MEASUREMENT OF PHOTOCONDUCTIVITY DECAY BY MICROWAVE REFLECTANCE
SEMI MF1726 : 2010(R2015) PRACTICE FOR ANALYSIS OF CRYSTALLOGRAPHIC PERFECTION OF SILICON WAFERS
SEMI M35 : 2014 GUIDE FOR DEVELOPING SPECIFICATIONS FOR SILICON WAFER SURFACE FEATURES DETECTED BY AUTOMATED INSPECTION
SEMI MF1239 : 2005(R2016) TEST METHOD FOR OXYGEN PRECIPITATION CHARACTERISTICS OF SILICON WAFERS BY MEASUREMENT OF INTERSTITIAL OXYGEN REDUCTION
SEMI M59 : 2014 TERMINOLOGY FOR SILICON TECHNOLOGY
SEMI M45 : 2010(R2017) SPECIFICATION FOR 300 MM WAFER SHIPPING SYSTEM
SEMI M58 : 2009(R2014) TEST METHOD FOR EVALUATING DMA BASED PARTICLE DEPOSITION SYSTEMS AND PROCESSES
SEMI MF1617 : 2004(R2016) TEST METHOD FOR MEASURING SURFACE SODIUM, ALUMINUM, POTASSIUM, AND IRON ON SILICON AND EPI SUBSTRATES BY SECONDARY ION MASS SPECTROMETRY
SEMI MF1530 : 2007(R2018) TEST METHOD FOR MEASURING FLATNESS, THICKNESS, AND TOTAL THICKNESS VARIATION ON SILICON WAFERS BY AUTOMATED NON-CONTACT SCANNING
SEMI T3 : 2013 SPECIFICATION FOR WAFER BOX LABELS
SEMI MF951 : 2005(R2016) TEST METHOD FOR DETERMINATION OF RADIAL INTERSTITIAL OXYGEN VARIATION IN SILICON WAFERS
SEMI MF1727 : 2010(R2015) PRACTICE FOR DETECTION OF OXIDATION INDUCED DEFECTS IN POLISHED SILICON WAFERS
SEMI MF523 : 2007(R2018) PRACTICE FOR UNAIDED VISUAL INSPECTION OF POLISHED SILICON WAFER SURFACES
SEMI T7 : 2016 SPECIFICATION FOR BACK SURFACE MARKING OF DOUBLE-SIDE POLISHED WAFERS WITH A TWO-DIMENSIONAL MATRIX CODE SYMBOL
SEMI MF1809 : 2010(R2015) GUIDE FOR SELECTION AND USE OF ETCHING SOLUTIONS TO DELINEATE STRUCTURAL DEFECTS IN SILICON

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