Name: SEMI MF672:2012(R2023)
Brand: SEMI
Price: 145.16 GBP

Guide for Measuring Resistivity Profiles Perpendicular to the Surface of a Silicon Wafer Using a Spreading Resistance Probe

Available format(s)

Hardcopy

Language(s)

English

Published date

01-10-2023

Publisher

Semiconductor Equipment & Materials Institute

This Guide covers procedures for measurement of the resistivity profile perpendicular to the surface of a silicon wafer of known orientation and type in any resistivity range for which there exist suitable standards.

DocumentType	Guide
Pages	0
PublisherName	Semiconductor Equipment & Materials Institute
Status	Current
Supersedes	SEMI MF672:2012(R2018) SEMI MF672:2012(R2018)

SEMI MF1392:2007(R2023)	Test Method for Determining Net Carrier Density Profiles in Silicon Wafers by Capacitance-Voltage Measurements with a Mercury Probe
SEMI MF1527:2012(R2018)	Guide for Application of Certified Reference Materials and Reference Wafers for Calibration and Control of Instruments for Measuring Resistivity of Silicon

SEMI MF84:2012	TEST METHOD FOR MEASURING RESISTIVITY OF SILICON WAFERS WITH AN IN-LINE FOUR-POINT PROBE
SEMI MF1392:2007	TEST METHOD FOR DETERMINING NET CARRIER DENSITY PROFILES IN SILICON WAFERS BY CAPACITANCE-VOLTAGE MEASUREMENTS WITH A MERCURY PROBE
SEMI MF374 :2012(R2018)	TEST METHOD FOR SHEET RESISTANCE OF SILICON EPITAXIAL, DIFFUSED, POLYSILICON, AND ION-IMPLANTED LAYERS USING AN IN-LINE FOUR-POINT PROBE WITH THE SINGLE-CONFIGURATION PROCEDURE
SEMI MF525 : 2012	TEST METHOD FOR MEASURING RESISTIVITY OF SILICON WAFERS USING A SPREADING RESISTANCE PROBE