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SEMI MF95:2007(R2023)

Current

Current

The latest, up-to-date edition.

Test Method for Thickness of Lightly Doped Silicon Epitaxial Layers on Heavily Doped Silicon Substrates Using an Infrared Dispersive Spectrophotometer

Available format(s)

Hardcopy

Language(s)

English

Published date

01-10-2023

This Test Method is a manual technique that requires the use of a dispersive infrared spectrophotometer.

DocumentType
Test Method
Pages
0
PublisherName
Semiconductor Equipment & Materials Institute
Status
Current
Supersedes

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£145.16
Excluding VAT

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