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SEMI MF95 : 2007(R2018)

Superseded

Superseded

A superseded Standard is one, which is fully replaced by another Standard, which is a new edition of the same Standard.

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superseded

A superseded Standard is one, which is fully replaced by another Standard, which is a new edition of the same Standard.

TEST METHOD FOR THICKNESS OF LIGHTLY DOPED SILICON EPITAXIAL LAYERS ON HEAVILY DOPED SILICON SUBSTRATES USING AN INFRARED DISPERSIVE SPECTROPHOTOMETER

Available format(s)

Hardcopy

Superseded date

04-11-2023

Language(s)

English

Published date

08-11-2018

Gives a technique for the measurement of the thickness of epitaxial layers of silicon deposited on silicon substrates.

DevelopmentNote
Not available for sale from ILI, customer to contact SEMI. (02/2005) Also available in CD-ROM. (10/2007)
DocumentType
Standard
Pages
0
PublisherName
Semiconductor Equipment & Materials Institute
Status
Superseded
SupersededBy

ISO 14237:2010 Surface chemical analysis Secondary-ion mass spectrometry Determination of boron atomic concentration in silicon using uniformly doped materials
SEMI MF525 : 2012 TEST METHOD FOR MEASURING RESISTIVITY OF SILICON WAFERS USING A SPREADING RESISTANCE PROBE
SEMI M4 : NOV 2003 SPECIFICATIONS FOR SOS EPITAXIAL WAFERS
BS ISO 14237:2010 Surface chemical analysis. Secondary-ion mass spectrometry. Determination of boron atomic concentration in silicon using uniformly doped materials
SEMI MF391 : 2010E TEST METHODS FOR MINORITY CARRIER DIFFUSION LENGTH IN EXTRINSIC SEMICONDUCTORS BY MEASUREMENT OF STEADY-STATE SURFACE PHOTOVOLTAGE
SEMI M62 : 2017 SPECIFICATIONS FOR SILICON EPITAXIAL WAFERS
SEMI MF110 : 2007(R2018) TEST METHOD FOR THICKNESS OF EPITAXIAL OR DIFFUSED LAYERS IN SILICON BY THE ANGLE LAPPING AND STAINING TECHNIQUE
SEMI M2 : 2003 SPECIFICATION FOR SILICON EPITAXIAL WAFERS FOR DISCRETE DEVICE APPLICATIONS
SEMI MF1726 : 2010(R2015) PRACTICE FOR ANALYSIS OF CRYSTALLOGRAPHIC PERFECTION OF SILICON WAFERS
SEMI M11 : 2004 SPECIFICATIONS FOR SILICON EPITAXIAL WAFERS FOR INTEGRATED CIRCUIT (IC) APPLICATIONS

SEMI MF84:2012 TEST METHOD FOR MEASURING RESISTIVITY OF SILICON WAFERS WITH AN IN-LINE FOUR-POINT PROBE
SEMI M59 : 2014 TERMINOLOGY FOR SILICON TECHNOLOGY

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