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SEMI MF391 : 2010E

SEMI MF391 : 2010E

Current

Current

The latest, up-to-date edition.

TEST METHODS FOR MINORITY CARRIER DIFFUSION LENGTH IN EXTRINSIC SEMICONDUCTORS BY MEASUREMENT OF STEADY-STATE SURFACE PHOTOVOLTAGE

Published date

12-01-2013

Publisher

Semiconductor Equipment & Materials Institute

Specifies three test methods that cover Minority carrier lifetime which is one of the essential characteristics of semiconductor materials. In epitaxial layers and in thin single crystal wafers, the surface recombination corrections necessary to derive the minority carrier lifetime from the photoconductive decay (PCD) method covered by SEMI MF28 and SEMI MF1535 are excessively large.

DevelopmentNote
Not available for sale from ILI, customer to contact SEMI. (02/2005) E = This standard was editorially modified in November 2017 to correct editorial errors. (01/2018)
DocumentType
Standard
PublisherName
Semiconductor Equipment & Materials Institute
Status
Current

SEMI MF1535 : 2015 TEST METHOD FOR CARRIER RECOMBINATION LIFETIME IN ELECTRONIC-GRADE SILICON WAFERS BY NONCONTACT MEASUREMENT OF PHOTOCONDUCTIVITY DECAY BY MICROWAVE REFLECTANCE
SEMI MF84:2012 TEST METHOD FOR MEASURING RESISTIVITY OF SILICON WAFERS WITH AN IN-LINE FOUR-POINT PROBE
SEMI MF533 : 2010(R2016) TEST METHODS FOR THICKNESS AND THICKNESS VARIATION OF SILICON WAFERS
SEMI M59 : 2014 TERMINOLOGY FOR SILICON TECHNOLOGY
SEMI MF28 : 2017 TEST METHOD FOR MINORITY CARRIER LIFETIME IN BULK GERMANIUM AND SILICON BY MEASUREMENT OF PHOTOCONDUCTIVITY DECAY
SEMI C23 : 2014 SPECIFICATIONS FOR BUFFERED OXIDE ETCHANTS
SEMI C34 : 2013(R 2019) SPECIFICATION AND GUIDELINE FOR MIXED ACID ETCHANTS
SEMI MF95 : 2007(R2018) TEST METHOD FOR THICKNESS OF LIGHTLY DOPED SILICON EPITAXIAL LAYERS ON HEAVILY DOPED SILICON SUBSTRATES USING AN INFRARED DISPERSIVE SPECTROPHOTOMETER
SEMI MF110 : 2007(R2018) TEST METHOD FOR THICKNESS OF EPITAXIAL OR DIFFUSED LAYERS IN SILICON BY THE ANGLE LAPPING AND STAINING TECHNIQUE
SEMI MF673 : 2017 TEST METHOD FOR MEASURING RESISTIVITY OF SEMICONDUCTOR WAFERS OR SHEET RESISTANCE OF SEMICONDUCTOR FILMS WITH A NONCONTACT EDDY-CURRENT GAUGE

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