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SEMI MF110 : 2007(R2018)

SEMI MF110 : 2007(R2018)

Superseded

Superseded

A superseded Standard is one, which is fully replaced by another Standard, which is a new edition of the same Standard.

View Superseded by
superseded

A superseded Standard is one, which is fully replaced by another Standard, which is a new edition of the same Standard.

TEST METHOD FOR THICKNESS OF EPITAXIAL OR DIFFUSED LAYERS IN SILICON BY THE ANGLE LAPPING AND STAINING TECHNIQUE

Superseded date

16-12-2023

Published date

04-08-2018

Publisher

Semiconductor Equipment & Materials Institute

Applicable for process control, research and development, and materials acceptance purposes.

DevelopmentNote
Not available for sale from ILI, customer to contact SEMI. (11/2003)
DocumentType
Standard
PublisherName
Semiconductor Equipment & Materials Institute
Status
Superseded
SupersededBy

SEMI MF525 : 2012 TEST METHOD FOR MEASURING RESISTIVITY OF SILICON WAFERS USING A SPREADING RESISTANCE PROBE
SEMI M41 : 2015 SPECIFICATION OF SILICON-ON-INSULATOR (SOI) FOR POWER DEVICE/ICS
SEMI M4 : NOV 2003 SPECIFICATIONS FOR SOS EPITAXIAL WAFERS
BS ISO 14237:2010 Surface chemical analysis. Secondary-ion mass spectrometry. Determination of boron atomic concentration in silicon using uniformly doped materials
SEMI MF391 : 2010E TEST METHODS FOR MINORITY CARRIER DIFFUSION LENGTH IN EXTRINSIC SEMICONDUCTORS BY MEASUREMENT OF STEADY-STATE SURFACE PHOTOVOLTAGE
SEMI M62 : 2017 SPECIFICATIONS FOR SILICON EPITAXIAL WAFERS
SEMI M2 : 2003 SPECIFICATION FOR SILICON EPITAXIAL WAFERS FOR DISCRETE DEVICE APPLICATIONS
ISO 14237:2010 Surface chemical analysis Secondary-ion mass spectrometry Determination of boron atomic concentration in silicon using uniformly doped materials
SEMI M11 : 2004 SPECIFICATIONS FOR SILICON EPITAXIAL WAFERS FOR INTEGRATED CIRCUIT (IC) APPLICATIONS
SEMI MF525:2012(R2018) Test Method for Measuring Resistivity of Silicon Wafers Using a Spreading Resistance Probe

SEMI M59 : 2014 TERMINOLOGY FOR SILICON TECHNOLOGY
SEMI MF42 : 2016 TEST METHOD FOR CONDUCTIVITY TYPE OF EXTRINSIC SEMICONDUCTING MATERIALS
SEMI MF95 : 2007(R2018) TEST METHOD FOR THICKNESS OF LIGHTLY DOPED SILICON EPITAXIAL LAYERS ON HEAVILY DOPED SILICON SUBSTRATES USING AN INFRARED DISPERSIVE SPECTROPHOTOMETER
SEMI C28 : 2011 SPECIFICATIONS FOR HYDROFLUORIC ACID

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