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SEMI M11 : 2004

SEMI M11 : 2004

Superseded

Superseded

A superseded Standard is one, which is fully replaced by another Standard, which is a new edition of the same Standard.

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superseded

A superseded Standard is one, which is fully replaced by another Standard, which is a new edition of the same Standard.

SPECIFICATIONS FOR SILICON EPITAXIAL WAFERS FOR INTEGRATED CIRCUIT (IC) APPLICATIONS

Superseded date

11-01-2005

Published date

01-12-2013

Publisher

Semiconductor Equipment & Materials Institute

Describes and provides examples of silicon epitaxial wafer requirements for integrated circuit device manufacture. It is restricted to wafers of diameter 100 mm or greater with epitaxial layer thickness less than or equal to 25 m.

DevelopmentNote
Not available for sale from ILI, customer to contact SEMI. (05/2001)
DocumentType
Standard
PublisherName
Semiconductor Equipment & Materials Institute
Status
Superseded
SupersededBy

SEMI M48 : 2001 GUIDE FOR EVALUATING CHEMICAL-MECHANICAL POLISHING PROCESSES OF FILMS ON UNPATTERNED SILICON SUBSTRATES
SEMI T2 : 1998(R2004) SPECIFICATION FOR MARKING OF WAFERS WITH A TWO-DIMENSIONAL MATRIX CODE SYMBOL
SEMI M2 : 2003 SPECIFICATION FOR SILICON EPITAXIAL WAFERS FOR DISCRETE DEVICE APPLICATIONS

SEMI MF1393 : 2002 TEST METHOD FOR DETERMINING NET CARRIER DENSITY IN SILICON WAFERS BY MILLER FEEDBACK PROFILER MEASUREMENTS WITH A MERCURY PROBE
SEMI MF1726 : 2010(R2015) PRACTICE FOR ANALYSIS OF CRYSTALLOGRAPHIC PERFECTION OF SILICON WAFERS
SEMI MF1239 : 2005(R2016) TEST METHOD FOR OXYGEN PRECIPITATION CHARACTERISTICS OF SILICON WAFERS BY MEASUREMENT OF INTERSTITIAL OXYGEN REDUCTION
SEMI M44 : 2005(R2011) GUIDE TO CONVERSION FACTORS FOR INTERSTITIAL OXYGEN IN SILICON
SEMI MF723 : 2007E(R2012)E PRACTICE FOR CONVERSION BETWEEN RESISTIVITY AND DOPANT OR CARRIER DENSITY FOR BORON-DOPED, PHOSPHOROUS-DOPED, AND ARSENIC-DOPED SILICON
SEMI M18 : 2012 GUIDE FOR DEVELOPING SPECIFICATION FORMS FOR ORDER ENTRY OF SILICON WAFERS
SEMI MF1392:2007 TEST METHOD FOR DETERMINING NET CARRIER DENSITY PROFILES IN SILICON WAFERS BY CAPACITANCE-VOLTAGE MEASUREMENTS WITH A MERCURY PROBE
SEMI MF951 : 2005(R2016) TEST METHOD FOR DETERMINATION OF RADIAL INTERSTITIAL OXYGEN VARIATION IN SILICON WAFERS
SEMI MF95 : 2007(R2018) TEST METHOD FOR THICKNESS OF LIGHTLY DOPED SILICON EPITAXIAL LAYERS ON HEAVILY DOPED SILICON SUBSTRATES USING AN INFRARED DISPERSIVE SPECTROPHOTOMETER
SEMI MF374 :2012(R2018) TEST METHOD FOR SHEET RESISTANCE OF SILICON EPITAXIAL, DIFFUSED, POLYSILICON, AND ION-IMPLANTED LAYERS USING AN IN-LINE FOUR-POINT PROBE WITH THE SINGLE-CONFIGURATION PROCEDURE
SEMI MF110 : 2007(R2018) TEST METHOD FOR THICKNESS OF EPITAXIAL OR DIFFUSED LAYERS IN SILICON BY THE ANGLE LAPPING AND STAINING TECHNIQUE
SEMI MF398 : 1992(R2002) TEST METHOD FOR MAJORITY CARRIER CONCENTRATION IN SEMICONDUCTORS BY MEASUREMENT OF WAVENUMBER OR WAVELENGTH OF THE PLASMA RESONANCE MINIMUM
SEMI MF525 : 2012 TEST METHOD FOR MEASURING RESISTIVITY OF SILICON WAFERS USING A SPREADING RESISTANCE PROBE
SEMI MF1241 : 95(R2000) TERMINOLOGY OF SILICON TECHNOLOGY
SEMI MF154 : 2005(R2016) GUIDE FOR IDENTIFICATION OF STRUCTURES AND CONTAMINANTS SEEN ON SPECULAR SILICON SURFACES
SEMI MF1727 : 2010(R2015) PRACTICE FOR DETECTION OF OXIDATION INDUCED DEFECTS IN POLISHED SILICON WAFERS
SEMI M2 : 2003 SPECIFICATION FOR SILICON EPITAXIAL WAFERS FOR DISCRETE DEVICE APPLICATIONS
SEMI MF672 : 2007 TEST METHOD FOR MEASURING RESISTIVITY PROFILES PERPENDICULAR TO THE SURFACE OF A SILICON WAFER USING A SPREADING RESISTANCE PROBE
SEMI MF523 : 2007(R2018) PRACTICE FOR UNAIDED VISUAL INSPECTION OF POLISHED SILICON WAFER SURFACES

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