SEMI M2 : 2003

Defines silicon epitaxial wafer requirements for discrete semiconductor device manufacture. Restricted to wafers with device feature sizes in excess of 1 micron or wafers with epi layers thicker than 25 microns. By defining inspection methods and acceptance criteria, both consumers and suppliers may uniformly define product characteristics and quality requirements. Primary standardized properties set forth in specification relate to electrical, physical, and surface defect parameters. Complete purchase specification requires additional physical properties be specified along with suitable test methods for measurement. SEMI M18 may be used for this purpose. Specifications are specifically directed to silicon homoepitaxial deposits on homogeneous silicon substrates only, exclusive of VLSI application.