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SEMI M17 : 2010(R2015)

SEMI M17 : 2010(R2015)

Superseded

Superseded

A superseded Standard is one, which is fully replaced by another Standard, which is a new edition of the same Standard.

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superseded

A superseded Standard is one, which is fully replaced by another Standard, which is a new edition of the same Standard.

GUIDE FOR A UNIVERSAL WAFER GRID

Superseded date

12-09-2021

Published date

01-12-2013

Publisher

Semiconductor Equipment & Materials Institute

Specifies a grid pattern that is useful for quantifying surface defects on a nominally circular semiconductor wafer. The grid is defined such that it contains 1000 elements of approximately equal area. Also provides a design for and guidance for use of a wafer grid that facilitates the determination of the fraction of the wafer surface area covered by observed defects.

DevelopmentNote
Not available for sale from ILI, customer to contact SEMI. (05/2001)
DocumentType
Standard
PublisherName
Semiconductor Equipment & Materials Institute
Status
Superseded
SupersededBy

SEMI M21 : 2018 GUIDE FOR ASSIGNING ADDRESSES TO RECTANGULAR ELEMENTS IN A CARTESIAN ARRAY
SEMI MF1049:2008(R2013) PRACTICE FOR SHALLOW ETCH PIT DETECTION ON SILICON WAFERS
SEMI M62 : 2017 SPECIFICATIONS FOR SILICON EPITAXIAL WAFERS
SEMI M20 : 2015 PRACTICE FOR ESTABLISHING A WAFER COORDINATE SYSTEM
SEMI M2 : 2003 SPECIFICATION FOR SILICON EPITAXIAL WAFERS FOR DISCRETE DEVICE APPLICATIONS
SEMI T13 : 2004(R2010) SPECIFICATION FOR DEVICE TRACKING: CONCEPTS, BEHAVIOR AND SERVICES

SEMI MF1726 : 2010(R2015) PRACTICE FOR ANALYSIS OF CRYSTALLOGRAPHIC PERFECTION OF SILICON WAFERS
SEMI M59 : 2014 TERMINOLOGY FOR SILICON TECHNOLOGY
SEMI MF1725 : 2010(R2015) PRACTICE FOR ANALYSIS OF CRYSTALLOGRAPHIC PERFECTION OF SILICON INGOTS
SEMI MF154 : 2005(R2016) GUIDE FOR IDENTIFICATION OF STRUCTURES AND CONTAMINANTS SEEN ON SPECULAR SILICON SURFACES
SEMI M62 : 2017 SPECIFICATIONS FOR SILICON EPITAXIAL WAFERS
SEMI MF1809 : 2010(R2015) GUIDE FOR SELECTION AND USE OF ETCHING SOLUTIONS TO DELINEATE STRUCTURAL DEFECTS IN SILICON

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