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SEMI MF2074 : 2012 (R2018)

SEMI MF2074 : 2012 (R2018)

Current

Current

The latest, up-to-date edition.

GUIDE FOR MEASURING DIAMETER OF SILICON AND OTHER SEMICONDUCTOR WAFERS

Available format(s)

Hardcopy

Language(s)

English

Published date

08-04-2018

Publisher

Semiconductor Equipment & Materials Institute

Provides guidance for Measuring Diameter of Silicon and Other Semiconductor Wafers

DevelopmentNote
Not available for sale from ILI, customer to contact SEMI. (03/2006)
DocumentType
Revision
Pages
0
PublisherName
Semiconductor Equipment & Materials Institute
Status
Current
SupersededBy

SEMI M3 : 2004 SPECIFICATIONS FOR POLISHED MONOCRYSTALLINE SAPPHIRE SUBSTRATES
SEMI MF81 : 2005(R2016) TEST METHOD FOR MEASURING RADIAL RESISTIVITY VARIATION ON SILICON WAFERS
SEMI M49 : 2016 GUIDE FOR SPECIFYING GEOMETRY MEASUREMENT SYSTEMS FOR SILICON WAFERS FOR THE 130 NM TO 16 NM TECHNOLOGY GENERATIONS
SEMI MF1527 : 2007 GUIDE FOR APPLICATION OF CERTIFIED REFERENCE MATERIALS AND REFERENCE WAFERS FOR CALIBRATION AND CONTROL OF INSTRUMENTS FOR MEASURING RESISTIVITY OF SILICON
SEMI M76 : 2010 SPECIFICATION FOR DEVELOPMENTAL 450 MM DIAMETER POLISHED SINGLE CRYSTAL SILICON WAFERS
SEMI M1 : 2017 SPECIFICATION FOR POLISHED SINGLE CRYSTAL SILICON WAFERS
SEMI M41 : 2015 SPECIFICATION OF SILICON-ON-INSULATOR (SOI) FOR POWER DEVICE/ICS
SEMI M6 : 2008 SPECIFICATION FOR SILICON WAFERS FOR USE AS PHOTOVOLTAIC SOLAR CELLS
SEMI 3D16 : 2016 SPECIFICATION FOR GLASS BASE MATERIAL FOR SEMICONDUCTOR PACKAGING
SEMI MF374 :2012(R2018) TEST METHOD FOR SHEET RESISTANCE OF SILICON EPITAXIAL, DIFFUSED, POLYSILICON, AND ION-IMPLANTED LAYERS USING AN IN-LINE FOUR-POINT PROBE WITH THE SINGLE-CONFIGURATION PROCEDURE
SEMI MF84:2012 TEST METHOD FOR MEASURING RESISTIVITY OF SILICON WAFERS WITH AN IN-LINE FOUR-POINT PROBE
SEMI M47 : 2007 SPECIFICATION FOR SILICON-ON-INSULATOR (SOI) WAFERS FOR CMOS LSI APPLICATIONS
SEMI MF43 : 2016 TEST METHOD FOR RESISTIVITY OF SEMICONDUCTOR MATERIALS
SEMI M9 : 2016 SPECIFICATION FOR POLISHED MONOCRYSTALLINE GALLIUM ARSENIDE WAFERS
SEMI M79 : 2018 SPECIFICATION FOR ROUND 100 MM POLISHED MONOCRYSTALLINE GERMANIUM WAFERS FOR SOLAR CELL APPLICATIONS
SEMI 3D2 : 2016 SPECIFICATION FOR GLASS CARRIER WAFERS FOR 3DS-IC APPLICATIONS
SEMI M55 : 2017 SPECIFICATION FOR POLISHED MONOCRYSTALLINE SILICON CARBIDE WAFERS
SEMI M65 : 2016 SPECIFICATION FOR SAPPHIRE SUBSTRATES TO USE FOR COMPOUND SEMICONDUCTOR EPITAXIAL WAFERS
SEMI HB1 : 2016 SPECIFICATION FOR SAPPHIRE WAFERS INTENDED FOR USE FOR MANUFACTURING HIGH BRIGHTNESS-LIGHT EMITTING DIODE DEVICES

SEMI M20 : 2015 PRACTICE FOR ESTABLISHING A WAFER COORDINATE SYSTEM

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Hardcopy - English
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