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SEMI MF671:2012

SEMI MF671:2012

Superseded

Superseded

A superseded Standard is one, which is fully replaced by another Standard, which is a new edition of the same Standard.

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superseded

A superseded Standard is one, which is fully replaced by another Standard, which is a new edition of the same Standard.

TEST METHOD FOR MEASURING FLAT LENGTH ON WAFERS OF SILICON AND OTHER ELECTRONIC MATERIALS

Superseded date

11-17-2023

Published date

01-12-2013

Publisher

Semiconductor Equipment & Materials Institute

Covers measuring flat length on wafers of silicon and other electronic materials. Also it's suitable for use in research, development, process control, quality assurance, and materials acceptance applications.

DevelopmentNote
Not available for sale from ILI, customer to contact SEMI. (02/2005)
DocumentType
Revision
PublisherName
Semiconductor Equipment & Materials Institute
Status
Superseded
SupersededBy

SEMI M3 : 2004 SPECIFICATIONS FOR POLISHED MONOCRYSTALLINE SAPPHIRE SUBSTRATES
SEMI M75 : 2016 SPECIFICATION FOR POLISHED MONOCRYSTALLINE GALLIUM ANTIMONIDE WAFERS
SEMI M23:2023 Specification for Polished Monocrystalline Indium Phosphide Wafers
SEMI M1 : 2017 SPECIFICATION FOR POLISHED SINGLE CRYSTAL SILICON WAFERS
SEMI M41 : 2015 SPECIFICATION OF SILICON-ON-INSULATOR (SOI) FOR POWER DEVICE/ICS
SEMI 3D16 : 2016 SPECIFICATION FOR GLASS BASE MATERIAL FOR SEMICONDUCTOR PACKAGING
SEMI M47 : 2007 SPECIFICATION FOR SILICON-ON-INSULATOR (SOI) WAFERS FOR CMOS LSI APPLICATIONS
SEMI M9 : 2016 SPECIFICATION FOR POLISHED MONOCRYSTALLINE GALLIUM ARSENIDE WAFERS
SEMI M49 : 2016 GUIDE FOR SPECIFYING GEOMETRY MEASUREMENT SYSTEMS FOR SILICON WAFERS FOR THE 130 NM TO 16 NM TECHNOLOGY GENERATIONS
SEMI M79 : 2018 SPECIFICATION FOR ROUND 100 MM POLISHED MONOCRYSTALLINE GERMANIUM WAFERS FOR SOLAR CELL APPLICATIONS
SEMI 3D2 : 2016 SPECIFICATION FOR GLASS CARRIER WAFERS FOR 3DS-IC APPLICATIONS
SEMI M55 : 2017 SPECIFICATION FOR POLISHED MONOCRYSTALLINE SILICON CARBIDE WAFERS
SEMI M65 : 2016 SPECIFICATION FOR SAPPHIRE SUBSTRATES TO USE FOR COMPOUND SEMICONDUCTOR EPITAXIAL WAFERS
SEMI HB1 : 2016 SPECIFICATION FOR SAPPHIRE WAFERS INTENDED FOR USE FOR MANUFACTURING HIGH BRIGHTNESS-LIGHT EMITTING DIODE DEVICES

SEMI M59 : 2014 TERMINOLOGY FOR SILICON TECHNOLOGY

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