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CEI EN 62047-16 : 2016

Current

Current

The latest, up-to-date edition.

SEMICONDUCTOR DEVICES - MICRO-ELECTROMECHANICAL DEVICES - PART 16: TEST METHODS FOR DETERMINING RESIDUAL STRESSES OF MEMS FILMS - WAFER CURVATURE AND CANTILEVER BEAM DEFLECTION METHODS

Available format(s)

Hardcopy , PDF

Language(s)

English

Published date

01-01-2016

FOREWORD
1 Scope
2 Normative references
3 Terms and definitions
4 Testing methods
Bibliography
Annex ZA (normative) - Normative references to international
         publications with their corresponding European
         publications

Defines the test methods to measure the residual stresses of films with thickness in the range of 0,01 [mu]m to 10 [mu]m in MEMS structures fabricated by wafer curvature or cantilever beam deflection methods.

Committee
CT 309
DevelopmentNote
Classificazione CEI 47-126. (08/2017)
DocumentType
Standard
Pages
18
PublisherName
Comitato Elettrotecnico Italiano
Status
Current

Standards Relationship
IEC 62047-16:2015 Identical
EN 62047-16:2015 Identical

EN 62047-21:2014 Semiconductor devices - Micro-electromechanical devices - Part 21: Test method for Poisson's ratio of thin film MEMS materials
IEC 62047-21:2014 Semiconductor devices - Micro-electromechanical devices - Part 21: Test method for Poisson's ratio of thin film MEMS materials

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$43.60
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