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IEC 62047-16:2015

Current

Current

The latest, up-to-date edition.

Semiconductor devices - Micro-electromechanical devices - Part 16: Test methods for determining residual stresses of MEMS films - Wafer curvature and cantilever beam deflection methods

Available format(s)

Hardcopy , PDF 1 User , PDF 3 Users , PDF 5 Users , PDF 9 Users

Language(s)

English - French

Published date

05-03-2015

FOREWORD
1 Scope
2 Normative references
3 Terms and definitions
4 Testing methods
Bibliography

IEC 62047-16:2015 specifies the test methods to measure the residual stresses of films with thickness in the range of 0,01 μ to 10 μ in MEMS structures fabricated by wafer curvature or cantilever beam deflection methods.

Committee
TC 47/SC 47F
DevelopmentNote
Stability date: 2017. (03/2015)
DocumentType
Standard
Pages
21
PublisherName
International Electrotechnical Committee
Status
Current

IEC 62047-21:2014 Semiconductor devices - Micro-electromechanical devices - Part 21: Test method for Poisson's ratio of thin film MEMS materials

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