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BS EN IEC 60749-17:2019

BS EN IEC 60749-17:2019

Current

Current

The latest, up-to-date edition.

Semiconductor devices. Mechanical and climatic test methods Neutron irradiation

Available format(s)

Hardcopy , PDF

Language(s)

English

Published date

15-05-2019

Publisher

British Standards Institution

The neutron irradiation test is performed to determine the susceptibility of semiconductor devices to non-ionizing energy loss (NIEL) degradation.

The neutron irradiation test is performed to determine the susceptibility of semiconductor devices to non-ionizing energy loss (NIEL) degradation. The test described herein is applicable to integrated circuits and discrete semiconductor devices and is intended for military- and aerospace-related applications. It is a destructive test. The objectives of the test are as follows: to detect and measure the degradation of critical semiconductor device parameters as a function of neutron fluence, and to determine if specified semiconductor device parameters are within specified limits after exposure to a specified level of neutron fluence (see Clause6).

Committee
EPL/47
DocumentType
Standard
ISBN
9780539000627
Pages
12
ProductNote
THIS STANDARD ALSO REFERS TO ASTM E 1018
PublisherName
British Standards Institution
Status
Current
Supersedes

Standards Relationship
IEC 60749-17:2019 Identical
EN IEC 60749-17:2019 Identical

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Hardcopy - English
PDF - English
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