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EN 62416 : 2010

Current

Current

The latest, up-to-date edition.

SEMICONDUCTOR DEVICES - HOT CARRIER TEST ON MOS TRANSISTORS

Published date

04-06-2010

FOREWORD
1 Scope
2 Abbreviations and letter symbols
3 Test structures
4 Stress time
5 Stress conditions
6 Sample size
7 Temperature
8 Failure criteria
9 Lifetime estimation method
10 Lifetime requirements
11 Reporting
Bibliography

IEC 62416:2010 describes the wafer level hot carrier test on NMOS and PMOS transistors.

Committee
SR 47
DocumentType
Standard
PublisherName
European Committee for Standards - Electrical
Status
Current

Standards Relationship
BS EN 62416:2010 Identical
NF EN 62416 : 2010 Identical
NEN EN IEC 62416 : 2010 Identical
I.S. EN 62416:2010 Identical
UNE-EN 62416:2010 Identical
DIN EN 62416:2010-12 Identical
PN EN 62416 : 2010 Identical
NBN EN 62416 : 2010 Identical
CEI EN 62416 : 2011 Identical
IEC 62416:2010 Identical

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