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SEMI MF1153 : 2010(R2015)

SEMI MF1153 : 2010(R2015)

Current

Current

The latest, up-to-date edition.

TEST METHOD FOR CHARACTERIZATION OF METAL-OXIDE SILICON (MOS) STRUCTURES BY CAPACITANCE-VOLTAGE MEASUREMENTS

Published date

01-12-2013

Publisher

Semiconductor Equipment & Materials Institute

Includes measurement of metal-oxide-silicon (MOS) structures for flatband capacitance, flatband voltage, average carrier density within a depletion length of the semiconductor-oxide interface, displacement of flatband voltage after application of voltage stress at elevated temperatures, mobile ionic charge contamination, and total fixed charge density.

DevelopmentNote
Not available for sale from ILI, customer to contact SEMI. (11/2003)
DocumentType
Standard
PublisherName
Semiconductor Equipment & Materials Institute
Status
Current

SEMI M66 : 2010(R2015) TEST METHOD TO EXTRACT EFFECTIVE WORK FUNCTION IN OXIDE AND HIGH-K GATE STACKS USING THE MIS FLAT BAND VOLTAGE-INSULATOR THICKNESS TECHNIQUE
SEMI M41 : 2015 SPECIFICATION OF SILICON-ON-INSULATOR (SOI) FOR POWER DEVICE/ICS
SEMI MF1392:2007 TEST METHOD FOR DETERMINING NET CARRIER DENSITY PROFILES IN SILICON WAFERS BY CAPACITANCE-VOLTAGE MEASUREMENTS WITH A MERCURY PROBE
SEMI MF1388 : 2007(R2018) TEST METHOD FOR GENERATION LIFETIME AND GENERATION VELOCITY OF SILICON MATERIAL BY CAPACITANCE-TIME MEASUREMENTS OF METAL-OXIDE-SILICON (MOS) CAPACITORS
SEMI MF2166 : 2010 PRACTICES FOR MONITORING NON-CONTACT DIELECTRIC CHARACTERIZATION SYSTEMS THROUGH USE OF SPECIAL REFERENCE WAFERS

SEMI M59 : 2014 TERMINOLOGY FOR SILICON TECHNOLOGY
SEMI MF723 : 2007E(R2012)E PRACTICE FOR CONVERSION BETWEEN RESISTIVITY AND DOPANT OR CARRIER DENSITY FOR BORON-DOPED, PHOSPHOROUS-DOPED, AND ARSENIC-DOPED SILICON
SEMI MF576 -2012:(R2018) TEST METHOD FOR MEASUREMENT OF INSULATOR THICKNESS AND REFRACTIVE INDEX ON SILICON SUBSTRATES BY ELLIPSOMETRY

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