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SEMI MF723 : 2007E(R2012)E

SEMI MF723 : 2007E(R2012)E

Current

Current

The latest, up-to-date edition.

PRACTICE FOR CONVERSION BETWEEN RESISTIVITY AND DOPANT OR CARRIER DENSITY FOR BORON-DOPED, PHOSPHOROUS-DOPED, AND ARSENIC-DOPED SILICON

Published date

12-01-2013

Publisher

Semiconductor Equipment & Materials Institute

Describes conversions between dopant density and resistivity for arsenic-, boron- and phosphorus- doped single crystal silicon and conversions from resistivity to carrier density for boron- and phosphorus doped single crystal silicon at 23 degrees C.

DevelopmentNote
Not available for sale from ILI, customer to contact SEMI. (02/2005) E = This standard was editorially modified in November 2016 to correct editorial errors. (11/2016)
DocumentType
Standard
PublisherName
Semiconductor Equipment & Materials Institute
Status
Current

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