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SEMI MF672 : 2007

SEMI MF672 : 2007

Superseded

Superseded

A superseded Standard is one, which is fully replaced by another Standard, which is a new edition of the same Standard.

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superseded

A superseded Standard is one, which is fully replaced by another Standard, which is a new edition of the same Standard.

TEST METHOD FOR MEASURING RESISTIVITY PROFILES PERPENDICULAR TO THE SURFACE OF A SILICON WAFER USING A SPREADING RESISTANCE PROBE

Superseded date

16-11-2023

Published date

12-01-2013

Publisher

Semiconductor Equipment & Materials Institute

Describes procedures for measurement of the resistivity profile perpendicular to the surface of a silicon wafer of known orientation and type in any resistivity range for which there exist suitable standards.

DevelopmentNote
Not available for sale from ILI, customer to contact SEMI. (02/2005) Also available in CD-ROM. (07/2006)
DocumentType
Standard
PublisherName
Semiconductor Equipment & Materials Institute
Status
Superseded
SupersededBy

SEMI MF1527 : 2007 GUIDE FOR APPLICATION OF CERTIFIED REFERENCE MATERIALS AND REFERENCE WAFERS FOR CALIBRATION AND CONTROL OF INSTRUMENTS FOR MEASURING RESISTIVITY OF SILICON
SEMI MF1527:2012(R2023) Guide for Application of Certified Reference Materials and Reference Wafers for Calibration and Control of Instruments for Measuring Resistivity of Silicon
ISO 14237:2010 Surface chemical analysis Secondary-ion mass spectrometry Determination of boron atomic concentration in silicon using uniformly doped materials
SEMI MF1392:2007 TEST METHOD FOR DETERMINING NET CARRIER DENSITY PROFILES IN SILICON WAFERS BY CAPACITANCE-VOLTAGE MEASUREMENTS WITH A MERCURY PROBE
SEMI MF950 : 2007(R2018) TEST METHOD FOR MEASURING THE DEPTH OF CRYSTAL DAMAGE OF A MECHANICALLY WORKED SILICON WAFER SURFACE BY ANGLE POLISHED AND DEFECT ETCHING
BS ISO 14237:2010 Surface chemical analysis. Secondary-ion mass spectrometry. Determination of boron atomic concentration in silicon using uniformly doped materials
SEMI M62 : 2017 SPECIFICATIONS FOR SILICON EPITAXIAL WAFERS
SEMI M2 : 2003 SPECIFICATION FOR SILICON EPITAXIAL WAFERS FOR DISCRETE DEVICE APPLICATIONS
SEMI M11 : 2004 SPECIFICATIONS FOR SILICON EPITAXIAL WAFERS FOR INTEGRATED CIRCUIT (IC) APPLICATIONS

SEMI MF84:2012 TEST METHOD FOR MEASURING RESISTIVITY OF SILICON WAFERS WITH AN IN-LINE FOUR-POINT PROBE
SEMI C31 : 2015 SPECIFICATION FOR METHANOL
SEMI M59 : 2014 TERMINOLOGY FOR SILICON TECHNOLOGY
SEMI MF723 : 2007E(R2012)E PRACTICE FOR CONVERSION BETWEEN RESISTIVITY AND DOPANT OR CARRIER DENSITY FOR BORON-DOPED, PHOSPHOROUS-DOPED, AND ARSENIC-DOPED SILICON
SEMI MF42 : 2016 TEST METHOD FOR CONDUCTIVITY TYPE OF EXTRINSIC SEMICONDUCTING MATERIALS
SEMI MF1392:2007 TEST METHOD FOR DETERMINING NET CARRIER DENSITY PROFILES IN SILICON WAFERS BY CAPACITANCE-VOLTAGE MEASUREMENTS WITH A MERCURY PROBE
SEMI MF374 :2012(R2018) TEST METHOD FOR SHEET RESISTANCE OF SILICON EPITAXIAL, DIFFUSED, POLYSILICON, AND ION-IMPLANTED LAYERS USING AN IN-LINE FOUR-POINT PROBE WITH THE SINGLE-CONFIGURATION PROCEDURE
SEMI C28 : 2011 SPECIFICATIONS FOR HYDROFLUORIC ACID
SEMI MF525 : 2012 TEST METHOD FOR MEASURING RESISTIVITY OF SILICON WAFERS USING A SPREADING RESISTANCE PROBE
SEMI C29 : 2010 SPECIFICATIONS AND GUIDE FOR 4.9% HYDROFLUORIC ACID (10:1 V/V)
SEMI MF674 : 2016 PRACTICE FOR PREPARING SILICON FOR SPREADING RESISTANCE MEASUREMENTS

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