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EN 62047-8:2011

Current

Current

The latest, up-to-date edition.

Semiconductor devices - Micro-electromechanical devices - Part 8: Strip bending test method for tensile property measurement of thin films

Published date

06-05-2011

FOREWORD
1 Scope
2 Normative references
3 Terms and definitions
4 Test apparatus
5 Test piece
6 Test procedure and analysis
7 Test report
Annex A (informative) - Data analysis: Test results
        by using nanoindentation apparatus
Annex B (informative) - Test piece fabrication: MEMS
        process
Annex C (informative) - Effect of misalignment and
        geometry on property measurement
Bibliography

IEC 62047-8:2011 specifies the strip bending test method to measure tensile properties of thin films with high accuracy, repeatability, moderate effort of alignment and handling compared to the conventional tensile test. This testing method is valid for test pieces with a thickness between 50 nm and several mum, and with an aspect ratio (ratio of length to thickness) of more than 300. The hanging strip (or bridge) between two fixed supports are widely adopted in MEMS or micro-machines. It is much easier to fabricate these strips than the conventional tensile test pieces. The test procedures are so simple to be readily automated. This international standard can be utilized as a quality control test for MEMS production since its testing throughput is very high compared to the conventional tensile test.

Committee
CLC/SR 47F
DocumentType
Standard
PublisherName
European Committee for Standards - Electrical
Status
Current

BS EN 62047-22:2014 Semiconductor devices. Micro-electromechanical devices Electromechanical tensile test method for conductive thin films on flexible substrates
CEI EN 62047-10 : 2012 SEMICONDUCTOR DEVICES - MICROELECTROMECHANICAL DEVICES - PART 10: MICRO-PILLAR COMPRESSION TEST FOR MEMS MATERIALS
CEI EN 62047-21 : 2016 SEMICONDUCTOR DEVICES - MICRO-ELECTROMECHANICAL DEVICES - PART 21: TEST METHOD FOR POISSON'S RATIO OF THIN FILM MEMS MATERIALS
EN 62047-21:2014 Semiconductor devices - Micro-electromechanical devices - Part 21: Test method for Poisson's ratio of thin film MEMS materials
I.S. EN 62047-10:2011 SEMICONDUCTOR DEVICES - MICRO-ELECTROMECHANICAL DEVICES - PART 10: MICRO-PILLAR COMPRESSION TEST FOR MEMS MATERIALS (IEC 62047-10:2011 (EQV))
I.S. EN 62047-22:2014 SEMICONDUCTOR DEVICES - MICROELECTROMECHANICAL DEVICES - PART 22: ELECTROMECHANICAL TENSILE TEST METHOD FOR CONDUCTIVE THIN FILMS ON FLEXIBLE SUBSTRATES
BS EN 62047-10:2011 Semiconductor devices. Micro-electromechanical devices Micro-pillar compression test for MEMS materials
I.S. EN 62047-21:2014 SEMICONDUCTOR DEVICES - MICROELECTROMECHANICAL DEVICES - PART 21: TEST METHOD FOR POISSON'S RATIO OF THIN FILM MEMS MATERIALS
BS EN 62047-21:2014 Semiconductor devices. Micro-electromechanical devices Test method for Poisson\'s ratio of thin film MEMS materials
EN 62047-22:2014 Semiconductor devices - Micro-electromechanical devices - Part 22: Electromechanical tensile test method for conductive thin films on flexible substrates
EN 62047-10 : 2011 SEMICONDUCTOR DEVICES - MICRO-ELECTROMECHANICAL DEVICES - PART 10: MICRO-PILLAR COMPRESSION TEST FOR MEMS MATERIALS (IEC 62047-10:2011)

IEC 62047-2:2006 Semiconductor devices - Micro-electromechanical devices - Part 2: Tensile testing method of thin film materials
IEC 62047-3:2006 Semiconductor devices - Micro-electromechanical devices - Part 3: Thin film standard test piece for tensile testing

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